Effect of temperature-dependent carrier recombination on the efficiency droop in InGaN/GaN single quantum well (SWQ) light emitting diode (LED) chips

Quoc Hung Pham, Jyh Chen Chen, Farn Shiun Hwu, Huy Bich Nguyen

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

The electrical and thermal behaviors of LED are systematically investigated using a numerical method. The focus is on how the temperature-dependent carrier recombination induces an efficiency droop. The thermal effect enhances the efficiency droop.

Original languageEnglish
Title of host publicationOptics and Photonics for Energy and the Environment, E2 2016
PublisherOptica Publishing Group (formerly OSA)
ISBN (Electronic)9781557528209
StatePublished - 2016
EventOptics and Photonics for Energy and the Environment, E2 2016 - Leipzig, Germany
Duration: 14 Nov 201617 Nov 2016

Publication series

NameOptics InfoBase Conference Papers

Conference

ConferenceOptics and Photonics for Energy and the Environment, E2 2016
Country/TerritoryGermany
CityLeipzig
Period14/11/1617/11/16

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