Effect of temperature-dependent carrier recombination on the efficiency droop in InGaN/GaN single quantum well (SWQ) light emitting diode (LED) chips

Quoc Hung Pham; Jyh Chen Chen; Farn Shiun Hwu; Huy Bich Nguyen

doi:10.1364/FTS.2016.JW4A.7

Effect of temperature-dependent carrier recombination on the efficiency droop in InGaN/GaN single quantum well (SWQ) light emitting diode (LED) chips

Quoc Hung Pham, Jyh Chen Chen, Farn Shiun Hwu, Huy Bich Nguyen

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

The electrical and thermal behaviors of LED are systematically investigated using a numerical method. The focus is on how the temperature-dependent carrier recombination induces an efficiency droop. The thermal effect enhances the efficiency droop.

Original language	English
Title of host publication	Fourier Transform Spectroscopy, FTS 2016
Publisher	Optica Publishing Group (formerly OSA)
Pages	3
Number of pages	1
ISBN (Print)	9780960038046
DOIs	https://doi.org/10.1364/FTS.2016.JW4A.7
State	Published - 2016
Event	Fourier Transform Spectroscopy, FTS 2016 - Leipzig, Germany Duration: 14 Nov 2016 → 17 Nov 2016

Publication series

Name	Optics InfoBase Conference Papers
ISSN (Electronic)	2162-2701

Conference

Conference	Fourier Transform Spectroscopy, FTS 2016
Country/Territory	Germany
City	Leipzig
Period	14/11/16 → 17/11/16

Access to Document

10.1364/FTS.2016.JW4A.7

Study on Electrical, Thermal and Optical Coupling of High Power Led with Mqw(1/3)
Chen, J.-C. (PI)
1/08/15 → 31/07/16
Project: Research

Cite this

Pham, Q. H., Chen, J. C., Hwu, F. S., & Nguyen, H. B. (2016). Effect of temperature-dependent carrier recombination on the efficiency droop in InGaN/GaN single quantum well (SWQ) light emitting diode (LED) chips. In Fourier Transform Spectroscopy, FTS 2016 (pp. 3). (Optics InfoBase Conference Papers). Optica Publishing Group (formerly OSA). https://doi.org/10.1364/FTS.2016.JW4A.7

@inproceedings{bc895ee8c68c4a00a7a8bb9b5c25bdfa,

title = "Effect of temperature-dependent carrier recombination on the efficiency droop in InGaN/GaN single quantum well (SWQ) light emitting diode (LED) chips",

abstract = "The electrical and thermal behaviors of LED are systematically investigated using a numerical method. The focus is on how the temperature-dependent carrier recombination induces an efficiency droop. The thermal effect enhances the efficiency droop.",

author = "Pham, {Quoc Hung} and Chen, {Jyh Chen} and Hwu, {Farn Shiun} and Nguyen, {Huy Bich}",

note = "Publisher Copyright: {\textcopyright} OSA 2016.; Fourier Transform Spectroscopy, FTS 2016 ; Conference date: 14-11-2016 Through 17-11-2016",

year = "2016",

doi = "10.1364/FTS.2016.JW4A.7",

language = "???core.languages.en_GB???",

isbn = "9780960038046",

series = "Optics InfoBase Conference Papers",

publisher = "Optica Publishing Group (formerly OSA)",

pages = "3",

booktitle = "Fourier Transform Spectroscopy, FTS 2016",

}

Pham, QH, Chen, JC, Hwu, FS & Nguyen, HB 2016, Effect of temperature-dependent carrier recombination on the efficiency droop in InGaN/GaN single quantum well (SWQ) light emitting diode (LED) chips. in Fourier Transform Spectroscopy, FTS 2016. Optics InfoBase Conference Papers, Optica Publishing Group (formerly OSA), pp. 3, Fourier Transform Spectroscopy, FTS 2016, Leipzig, Germany, 14/11/16. https://doi.org/10.1364/FTS.2016.JW4A.7

Effect of temperature-dependent carrier recombination on the efficiency droop in InGaN/GaN single quantum well (SWQ) light emitting diode (LED) chips. / Pham, Quoc Hung; Chen, Jyh Chen; Hwu, Farn Shiun et al.
Fourier Transform Spectroscopy, FTS 2016. Optica Publishing Group (formerly OSA), 2016. p. 3 (Optics InfoBase Conference Papers).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Effect of temperature-dependent carrier recombination on the efficiency droop in InGaN/GaN single quantum well (SWQ) light emitting diode (LED) chips

AU - Pham, Quoc Hung

AU - Chen, Jyh Chen

AU - Hwu, Farn Shiun

AU - Nguyen, Huy Bich

PY - 2016

Y1 - 2016

N2 - The electrical and thermal behaviors of LED are systematically investigated using a numerical method. The focus is on how the temperature-dependent carrier recombination induces an efficiency droop. The thermal effect enhances the efficiency droop.

AB - The electrical and thermal behaviors of LED are systematically investigated using a numerical method. The focus is on how the temperature-dependent carrier recombination induces an efficiency droop. The thermal effect enhances the efficiency droop.

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U2 - 10.1364/FTS.2016.JW4A.7

DO - 10.1364/FTS.2016.JW4A.7

M3 - 會議論文篇章

AN - SCOPUS:85136238634

SN - 9780960038046

T3 - Optics InfoBase Conference Papers

SP - 3

BT - Fourier Transform Spectroscopy, FTS 2016

PB - Optica Publishing Group (formerly OSA)

T2 - Fourier Transform Spectroscopy, FTS 2016

Y2 - 14 November 2016 through 17 November 2016

ER -

Effect of temperature-dependent carrier recombination on the efficiency droop in InGaN/GaN single quantum well (SWQ) light emitting diode (LED) chips

Abstract

Publication series

Conference

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Projects

Study on Electrical, Thermal and Optical Coupling of High Power Led with Mqw(1/3)

Cite this