Effect of polarization on the efficiency droop of InGaN/GaN single quantum well LED chips

Quoc Hung Pham; Farn Shiun Hwu; Huy Bich Nguyen; Jyh Chen Chen

Effect of polarization on the efficiency droop of InGaN/GaN single quantum well LED chips

Quoc Hung Pham, Farn Shiun Hwu, Huy Bich Nguyen, Jyh Chen Chen

Research output: Contribution to journal › Conference article › peer-review

Abstract

A numerical simulation is performed to study the electrical, thermal behaviors of InGaN/ GaN single quantum well LEDs. The carrier drift-diffusion model is used to investigate the effect of polarization on the efficiency droop.

Original language	English
Article number	DM2D.2
Journal	Optics InfoBase Conference Papers
State	Published - 2015
Event	Solid-State and Organic Lighting, SOLED 2015 - Suzhou, China Duration: 2 Nov 2015 → 5 Nov 2015

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@article{20a4d39d31264987960a491dc67d9ba3,

title = "Effect of polarization on the efficiency droop of InGaN/GaN single quantum well LED chips",

abstract = "A numerical simulation is performed to study the electrical, thermal behaviors of InGaN/ GaN single quantum well LEDs. The carrier drift-diffusion model is used to investigate the effect of polarization on the efficiency droop.",

author = "Pham, {Quoc Hung} and Hwu, {Farn Shiun} and Nguyen, {Huy Bich} and Chen, {Jyh Chen}",

note = "Publisher Copyright: {\textcopyright} 2015 OSA.; Solid-State and Organic Lighting, SOLED 2015 ; Conference date: 02-11-2015 Through 05-11-2015",

year = "2015",

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journal = "Optics InfoBase Conference Papers",

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TY - JOUR

T1 - Effect of polarization on the efficiency droop of InGaN/GaN single quantum well LED chips

AU - Pham, Quoc Hung

AU - Hwu, Farn Shiun

AU - Nguyen, Huy Bich

AU - Chen, Jyh Chen

PY - 2015

Y1 - 2015

N2 - A numerical simulation is performed to study the electrical, thermal behaviors of InGaN/ GaN single quantum well LEDs. The carrier drift-diffusion model is used to investigate the effect of polarization on the efficiency droop.

AB - A numerical simulation is performed to study the electrical, thermal behaviors of InGaN/ GaN single quantum well LEDs. The carrier drift-diffusion model is used to investigate the effect of polarization on the efficiency droop.

UR - http://www.scopus.com/inward/record.url?scp=85136361221&partnerID=8YFLogxK

M3 - 會議論文

AN - SCOPUS:85136361221

SN - 2162-2701

JO - Optics InfoBase Conference Papers

JF - Optics InfoBase Conference Papers

M1 - DM2D.2

T2 - Solid-State and Organic Lighting, SOLED 2015

Y2 - 2 November 2015 through 5 November 2015

ER -

Effect of polarization on the efficiency droop of InGaN/GaN single quantum well LED chips

Abstract

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