Effect of polarization on the efficiency droop of InGaN/GaN single quantum well LED chips

Quoc Hung Pham, Farn Shiun Hwu, Huy Bich Nguyen, Jyh Chen Chen

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

A numerical simulation is performed to study the electrical, thermal behaviors of InGaN/ GaN single quantum well LEDs. The carrier drift-diffusion model is used to investigate the effect of polarization on the efficiency droop.

Original languageEnglish
Title of host publicationSolid-State and Organic Lighting, SOLED 2015
PublisherOptica Publishing Group (formerly OSA)
ISBN (Electronic)9781557528209
StatePublished - 2015
EventSolid-State and Organic Lighting, SOLED 2015 - Suzhou, China
Duration: 2 Nov 20155 Nov 2015

Publication series

NameOptics InfoBase Conference Papers

Conference

ConferenceSolid-State and Organic Lighting, SOLED 2015
Country/TerritoryChina
CitySuzhou
Period2/11/155/11/15

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