Effect of phase separation on mechanical strength of co-sputtering Cu(Ti) thin film in chip-level 3DIC bonding

Po Chen Lin; Hao Chen; Hsien Chien Hsieh; Albert T. Wu

doi:10.1016/j.matlet.2016.11.075

Effect of phase separation on mechanical strength of co-sputtering Cu(Ti) thin film in chip-level 3DIC bonding

Po Chen Lin, Hao Chen, Hsien Chien Hsieh, Albert T. Wu

Department of Chemical and Materials Engineering

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

In the present study, Cu bonds were fabricated through face-to-face thermocompression by co-sputtering Cu(Ti) films. The diffusion behaviors and bonding strengths at various Ti concentrations were analyzed. Phase separation occurred when Ti diffused toward the substrate and Cu moved to the surface with limited oxidation. A high affinity between Ti and O causes a concentration gradient, which acts as the driving force for Ti diffusion. A Cu(Ti) film containing 15 at% Ti with a bonding time of 60 min at 400 °C exhibited the highest bonding strength with no void caused by phase separation.

Original language	English
Pages (from-to)	93-96
Number of pages	4
Journal	Materials Letters
Volume	189
DOIs	https://doi.org/10.1016/j.matlet.2016.11.075
State	Published - 15 Feb 2017

Keywords

Co-sputtered Cu(Ti)
Cu bonding
Electronic materials
Phase separation
Shear test
Sputtering

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10.1016/j.matlet.2016.11.075

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title = "Effect of phase separation on mechanical strength of co-sputtering Cu(Ti) thin film in chip-level 3DIC bonding",

abstract = "In the present study, Cu bonds were fabricated through face-to-face thermocompression by co-sputtering Cu(Ti) films. The diffusion behaviors and bonding strengths at various Ti concentrations were analyzed. Phase separation occurred when Ti diffused toward the substrate and Cu moved to the surface with limited oxidation. A high affinity between Ti and O causes a concentration gradient, which acts as the driving force for Ti diffusion. A Cu(Ti) film containing 15 at% Ti with a bonding time of 60 min at 400 °C exhibited the highest bonding strength with no void caused by phase separation.",

keywords = "Co-sputtered Cu(Ti), Cu bonding, Electronic materials, Phase separation, Shear test, Sputtering",

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T1 - Effect of phase separation on mechanical strength of co-sputtering Cu(Ti) thin film in chip-level 3DIC bonding

AU - Lin, Po Chen

AU - Chen, Hao

AU - Hsieh, Hsien Chien

AU - Wu, Albert T.

PY - 2017/2/15

Y1 - 2017/2/15

N2 - In the present study, Cu bonds were fabricated through face-to-face thermocompression by co-sputtering Cu(Ti) films. The diffusion behaviors and bonding strengths at various Ti concentrations were analyzed. Phase separation occurred when Ti diffused toward the substrate and Cu moved to the surface with limited oxidation. A high affinity between Ti and O causes a concentration gradient, which acts as the driving force for Ti diffusion. A Cu(Ti) film containing 15 at% Ti with a bonding time of 60 min at 400 °C exhibited the highest bonding strength with no void caused by phase separation.

AB - In the present study, Cu bonds were fabricated through face-to-face thermocompression by co-sputtering Cu(Ti) films. The diffusion behaviors and bonding strengths at various Ti concentrations were analyzed. Phase separation occurred when Ti diffused toward the substrate and Cu moved to the surface with limited oxidation. A high affinity between Ti and O causes a concentration gradient, which acts as the driving force for Ti diffusion. A Cu(Ti) film containing 15 at% Ti with a bonding time of 60 min at 400 °C exhibited the highest bonding strength with no void caused by phase separation.

KW - Co-sputtered Cu(Ti)

KW - Cu bonding

KW - Electronic materials

KW - Phase separation

KW - Shear test

KW - Sputtering

UR - http://www.scopus.com/inward/record.url?scp=84997777001&partnerID=8YFLogxK

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DO - 10.1016/j.matlet.2016.11.075

M3 - 期刊論文

AN - SCOPUS:84997777001

SN - 0167-577X

VL - 189

SP - 93

EP - 96

JO - Materials Letters

JF - Materials Letters

ER -

Effect of phase separation on mechanical strength of co-sputtering Cu(Ti) thin film in chip-level 3DIC bonding

Abstract

Keywords

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