Effect of microwave processing on oxygen plasma-assisted bonding enabling rapid layer transfer

C. C. Ho; F. S. Lo; S. C. Jeng; J. H. Li; H. H. Chang; T. H. Lee

doi:10.1149/2.006401ssl

Effect of microwave processing on oxygen plasma-assisted bonding enabling rapid layer transfer

C. C. Ho, F. S. Lo, S. C. Jeng, J. H. Li, H. H. Chang, T. H. Lee

Department of Mechanical Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

The study demonstrates that microwave processing in a domestic microwave oven (2.45 GHz) can rapidly increase the bonding strength of Si/Si, Si/SiO ₂, and SiO₂/SiO₂ pairs bonded through oxygen plasma surface activation. After 10-min, 900 W microwave processing, the bonding strength of the Si/SiO₂ pair (2.4 J/m²) was almost twice the bonding strengths of the Si/Si and SiO₂/SiO₂ pairs (∼1.3 J/m²). Based on these bonding characteristics of the Si/SiO₂ pair, we can employ a two-stage microwave processing technique, at powers of 540 W and 900 W, to transfer a silicon layer onto an 8" silicon handle wafer from the as-bonded stage in 30 min.

Original language	English
Pages (from-to)	P4-P6
Journal	ECS Solid State Letters
Volume	3
Issue number	1
DOIs	https://doi.org/10.1149/2.006401ssl
State	Published - 2014

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title = "Effect of microwave processing on oxygen plasma-assisted bonding enabling rapid layer transfer",

abstract = "The study demonstrates that microwave processing in a domestic microwave oven (2.45 GHz) can rapidly increase the bonding strength of Si/Si, Si/SiO 2, and SiO2/SiO2 pairs bonded through oxygen plasma surface activation. After 10-min, 900 W microwave processing, the bonding strength of the Si/SiO2 pair (2.4 J/m2) was almost twice the bonding strengths of the Si/Si and SiO2/SiO2 pairs (∼1.3 J/m2). Based on these bonding characteristics of the Si/SiO2 pair, we can employ a two-stage microwave processing technique, at powers of 540 W and 900 W, to transfer a silicon layer onto an 8{"} silicon handle wafer from the as-bonded stage in 30 min.",

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T1 - Effect of microwave processing on oxygen plasma-assisted bonding enabling rapid layer transfer

AU - Ho, C. C.

AU - Lo, F. S.

AU - Jeng, S. C.

AU - Li, J. H.

AU - Chang, H. H.

AU - Lee, T. H.

PY - 2014

Y1 - 2014

N2 - The study demonstrates that microwave processing in a domestic microwave oven (2.45 GHz) can rapidly increase the bonding strength of Si/Si, Si/SiO 2, and SiO2/SiO2 pairs bonded through oxygen plasma surface activation. After 10-min, 900 W microwave processing, the bonding strength of the Si/SiO2 pair (2.4 J/m2) was almost twice the bonding strengths of the Si/Si and SiO2/SiO2 pairs (∼1.3 J/m2). Based on these bonding characteristics of the Si/SiO2 pair, we can employ a two-stage microwave processing technique, at powers of 540 W and 900 W, to transfer a silicon layer onto an 8" silicon handle wafer from the as-bonded stage in 30 min.

AB - The study demonstrates that microwave processing in a domestic microwave oven (2.45 GHz) can rapidly increase the bonding strength of Si/Si, Si/SiO 2, and SiO2/SiO2 pairs bonded through oxygen plasma surface activation. After 10-min, 900 W microwave processing, the bonding strength of the Si/SiO2 pair (2.4 J/m2) was almost twice the bonding strengths of the Si/Si and SiO2/SiO2 pairs (∼1.3 J/m2). Based on these bonding characteristics of the Si/SiO2 pair, we can employ a two-stage microwave processing technique, at powers of 540 W and 900 W, to transfer a silicon layer onto an 8" silicon handle wafer from the as-bonded stage in 30 min.

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DO - 10.1149/2.006401ssl

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SP - P4-P6

JO - ECS Solid State Letters

JF - ECS Solid State Letters

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Effect of microwave processing on oxygen plasma-assisted bonding enabling rapid layer transfer

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