Effect of m-plane GaN substrate miscut on InGaN/GaN quantum well growth

K. Y. Lai, T. Paskova, V. D. Wheeler, J. A. Grenko, M. A.L. Johnson, K. Udwary, E. A. Preble, K. R. Evans

Research output: Contribution to journalArticlepeer-review

9 Scopus citations

Abstract

The effect of m-plane GaN substrate miscut on the growth of InGaN/GaN quantum wells (QWs) was investigated. It was found that the miscut toward [0 0 0 1] c+-axis resulted in an increase of In incorporation efficiency and in a green-shift of the QW emission, while the miscut toward [1 1 2 0] a-axis resulted in even higher In compositions but it also led to an increased epitaxial surface roughness and deterioration of the QW structures. The results indicated that miscut toward a-axis is undesirable while miscut toward c+-axis is beneficial for achieving longer wavelength emission in QWs grown on m-plane GaN substrates.

Original languageEnglish
Pages (from-to)902-905
Number of pages4
JournalJournal of Crystal Growth
Volume312
Issue number7
DOIs
StatePublished - 15 Mar 2010

Keywords

  • A3. Metalorganic chemical vapor deposition
  • B1. Nitrides
  • B2. Semiconducting III-V materials
  • B3. Light emitting diodes

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