This work investigated the effect of interfacial dissolution on electromigration failures at metal micro-joint Interface. A theoretical model is first developed to define the critical temperature, which determines the EM-induced failure (either voiding or dissolution) at the metal micro-joint interface. Using the present developed theoretical model, a critical temperature (75.19 °C) is calculated out and explains the failure modes well at the Sn/Cu micro-joint interfaces observed in the present works. EM-induced Cu consumption is the EM failure mode at the test temperature over 75.19 °C (155, 180, and 200 °C) and (2) EM-induced voids is the EM failure mode at the test temperature below 75.19 °C (40 °C).
|Number of pages||5|
|Journal||Journal of Materials Science: Materials in Electronics|
|State||Published - 1 Oct 2017|