Effect of external strain on the conductivity of AlGaN/GaN high electron mobility transistors

B. S. Kang; S. Kim; J. Kim; F. Ren; K. Baik; S. J. Pearton; B. P. Gila; C. R. Abernathy; C. C. Pan; G. T. Chen; J. I. Chyi; V. Chandrasekaran; M. Sheplak; T. Nishida; S. N.G. Chu

Effect of external strain on the conductivity of AlGaN/GaN high electron mobility transistors

B. S. Kang, S. Kim, J. Kim, F. Ren, K. Baik, S. J. Pearton, B. P. Gila, C. R. Abernathy, C. C. Pan, G. T. Chen, J. I. Chyi, V. Chandrasekaran, M. Sheplak, T. Nishida, S. N.G. Chu

Research output: Contribution to conference › Paper › peer-review

1 Scopus citations

Abstract

The changes in conductance of the channel of AlGaN/GaN high electron mobility transistor structures during application of both tensile and compressive strain were measured. For fixed Al mole fraction, the changes in conductance were roughly linear over the range up to 2.7 × 10 ⁸ N.cm ^-2, with coefficients for planar devices of -6.0 +/- 2.5 × 10 ^-10 S.N ^-1.m ^-2 for tensile strain and +9.5+/-3.5 × 10 ^-10 S.N ^-1 .m ^-2 for compressive strain. For mesa-isolated structures, the coefficients were smaller due to the reduced effect of the AlGaN strain, with values of 5.5 +/- 1.1 × 10 ^-13 S.N ^-1.m ^-2 for tensile strain and 4.8 × 10 ^-13 S.N ^-1 .m ^-2 for compressive strain. The large changes in conductance demonstrate that simple AlGaN/GaN heterostructures are promising for pressure and strain sensor applications.

Original language	English
Pages	292-297
Number of pages	6
State	Published - 2003
Event	State-of-the-Art Program on Compound Semiconductors XXXIX and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics IV - Proceedings of the Intenational Symposium - Orlando,FL, United States Duration: 12 Oct 2003 → 17 Oct 2003

Conference

Conference	State-of-the-Art Program on Compound Semiconductors XXXIX and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics IV - Proceedings of the Intenational Symposium
Country/Territory	United States
City	Orlando,FL
Period	12/10/03 → 17/10/03

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Kang, B. S., Kim, S., Kim, J., Ren, F., Baik, K., Pearton, S. J., Gila, B. P., Abernathy, C. R., Pan, C. C., Chen, G. T., Chyi, J. I., Chandrasekaran, V., Sheplak, M., Nishida, T., & Chu, S. N. G. (2003). Effect of external strain on the conductivity of AlGaN/GaN high electron mobility transistors. 292-297. Paper presented at State-of-the-Art Program on Compound Semiconductors XXXIX and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics IV - Proceedings of the Intenational Symposium, Orlando,FL, United States.

Kang, B. S. ; Kim, S. ; Kim, J. et al. / Effect of external strain on the conductivity of AlGaN/GaN high electron mobility transistors. Paper presented at State-of-the-Art Program on Compound Semiconductors XXXIX and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics IV - Proceedings of the Intenational Symposium, Orlando,FL, United States.6 p.

@conference{cf267c01c3f24fcfb6413fd703426fe4,

title = "Effect of external strain on the conductivity of AlGaN/GaN high electron mobility transistors",

abstract = "The changes in conductance of the channel of AlGaN/GaN high electron mobility transistor structures during application of both tensile and compressive strain were measured. For fixed Al mole fraction, the changes in conductance were roughly linear over the range up to 2.7 × 10 8 N.cm -2, with coefficients for planar devices of -6.0 +/- 2.5 × 10 -10 S.N -1.m -2 for tensile strain and +9.5+/-3.5 × 10 -10 S.N -1 .m -2 for compressive strain. For mesa-isolated structures, the coefficients were smaller due to the reduced effect of the AlGaN strain, with values of 5.5 +/- 1.1 × 10 -13 S.N -1.m -2 for tensile strain and 4.8 × 10 -13 S.N -1 .m -2 for compressive strain. The large changes in conductance demonstrate that simple AlGaN/GaN heterostructures are promising for pressure and strain sensor applications.",

author = "Kang, {B. S.} and S. Kim and J. Kim and F. Ren and K. Baik and Pearton, {S. J.} and Gila, {B. P.} and Abernathy, {C. R.} and Pan, {C. C.} and Chen, {G. T.} and Chyi, {J. I.} and V. Chandrasekaran and M. Sheplak and T. Nishida and Chu, {S. N.G.}",

year = "2003",

language = "???core.languages.en_GB???",

pages = "292--297",

note = "State-of-the-Art Program on Compound Semiconductors XXXIX and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics IV - Proceedings of the Intenational Symposium ; Conference date: 12-10-2003 Through 17-10-2003",

}

Kang, BS, Kim, S, Kim, J, Ren, F, Baik, K, Pearton, SJ, Gila, BP, Abernathy, CR, Pan, CC, Chen, GT, Chyi, JI, Chandrasekaran, V, Sheplak, M, Nishida, T & Chu, SNG 2003, 'Effect of external strain on the conductivity of AlGaN/GaN high electron mobility transistors', Paper presented at State-of-the-Art Program on Compound Semiconductors XXXIX and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics IV - Proceedings of the Intenational Symposium, Orlando,FL, United States, 12/10/03 - 17/10/03 pp. 292-297.

Effect of external strain on the conductivity of AlGaN/GaN high electron mobility transistors. / Kang, B. S.; Kim, S.; Kim, J. et al.
2003. 292-297 Paper presented at State-of-the-Art Program on Compound Semiconductors XXXIX and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics IV - Proceedings of the Intenational Symposium, Orlando,FL, United States.

Research output: Contribution to conference › Paper › peer-review

TY - CONF

T1 - Effect of external strain on the conductivity of AlGaN/GaN high electron mobility transistors

AU - Kang, B. S.

AU - Kim, S.

AU - Kim, J.

AU - Ren, F.

AU - Baik, K.

AU - Pearton, S. J.

AU - Gila, B. P.

AU - Abernathy, C. R.

AU - Pan, C. C.

AU - Chen, G. T.

AU - Chyi, J. I.

AU - Chandrasekaran, V.

AU - Sheplak, M.

AU - Nishida, T.

AU - Chu, S. N.G.

PY - 2003

Y1 - 2003

N2 - The changes in conductance of the channel of AlGaN/GaN high electron mobility transistor structures during application of both tensile and compressive strain were measured. For fixed Al mole fraction, the changes in conductance were roughly linear over the range up to 2.7 × 10 8 N.cm -2, with coefficients for planar devices of -6.0 +/- 2.5 × 10 -10 S.N -1.m -2 for tensile strain and +9.5+/-3.5 × 10 -10 S.N -1 .m -2 for compressive strain. For mesa-isolated structures, the coefficients were smaller due to the reduced effect of the AlGaN strain, with values of 5.5 +/- 1.1 × 10 -13 S.N -1.m -2 for tensile strain and 4.8 × 10 -13 S.N -1 .m -2 for compressive strain. The large changes in conductance demonstrate that simple AlGaN/GaN heterostructures are promising for pressure and strain sensor applications.

AB - The changes in conductance of the channel of AlGaN/GaN high electron mobility transistor structures during application of both tensile and compressive strain were measured. For fixed Al mole fraction, the changes in conductance were roughly linear over the range up to 2.7 × 10 8 N.cm -2, with coefficients for planar devices of -6.0 +/- 2.5 × 10 -10 S.N -1.m -2 for tensile strain and +9.5+/-3.5 × 10 -10 S.N -1 .m -2 for compressive strain. For mesa-isolated structures, the coefficients were smaller due to the reduced effect of the AlGaN strain, with values of 5.5 +/- 1.1 × 10 -13 S.N -1.m -2 for tensile strain and 4.8 × 10 -13 S.N -1 .m -2 for compressive strain. The large changes in conductance demonstrate that simple AlGaN/GaN heterostructures are promising for pressure and strain sensor applications.

UR - http://www.scopus.com/inward/record.url?scp=5744227367&partnerID=8YFLogxK

M3 - 會議論文

AN - SCOPUS:5744227367

SP - 292

EP - 297

T2 - State-of-the-Art Program on Compound Semiconductors XXXIX and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics IV - Proceedings of the Intenational Symposium

Y2 - 12 October 2003 through 17 October 2003

ER -

Kang BS, Kim S, Kim J, Ren F, Baik K, Pearton SJ et al.. Effect of external strain on the conductivity of AlGaN/GaN high electron mobility transistors. 2003. Paper presented at State-of-the-Art Program on Compound Semiconductors XXXIX and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics IV - Proceedings of the Intenational Symposium, Orlando,FL, United States.

Effect of external strain on the conductivity of AlGaN/GaN high electron mobility transistors

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