Effect of Cl2/Ar dry etching on p -GaN with Ni/Au metallization characterization

Kuang Po Hsueh, Hung Tsao Hsu, Che Ming Wang, Shou Chian Huang, Yue Ming Hsin, Jinn Kong Sheu

Research output: Contribution to journalArticlepeer-review

19 Scopus citations

Abstract

This work investigates the effect of Cl2 Ar dry etching on p -GaN. The root-mean-square (rms) surface roughness is measured, and the depth display (Bearing analysis) is monitored. The current-voltage characteristics of etched p -GaN with Ni (20 nm) Au (20 nm) metallization are studied. Experimental results indicate that the etching rate does not increase significantly with the Cl2 flow rate at a constant power or chamber pressure. The Bearing ratio data exhibit a much stronger variation with etch conditions, the rms displays the same trend but to a lesser extent.

Original languageEnglish
Article number252107
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume87
Issue number25
DOIs
StatePublished - 2005

Fingerprint

Dive into the research topics of 'Effect of Cl<sub>2</sub>/Ar dry etching on p -GaN with Ni/Au metallization characterization'. Together they form a unique fingerprint.

Cite this