This work investigates the effect of Cl2 Ar dry etching on p -GaN. The root-mean-square (rms) surface roughness is measured, and the depth display (Bearing analysis) is monitored. The current-voltage characteristics of etched p -GaN with Ni (20 nm) Au (20 nm) metallization are studied. Experimental results indicate that the etching rate does not increase significantly with the Cl2 flow rate at a constant power or chamber pressure. The Bearing ratio data exhibit a much stronger variation with etch conditions, the rms displays the same trend but to a lesser extent.