Effect of base doping gradients on the electrical performance of AlGaAs/GaAs heterojunction bipolar transistors

S. Noor Mohammad, J. Chen, J. I. Chyi, H. Morkoç

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

Current-voltage characteristics of AlGaAs/GaAs heterojunction bipolar transistors (HBTs) grown by molecular beam epitaxy with nonuniform doping in the base region have been studied. Experimental measurements indicate that an optimization of the base doping leads to substantial improvement in the current gain and related properties. Unequal variations of the band-gap narrowing effect and Fermi-Dirac statistics effect seem to underlie this improvement. It is found that, in general, the higher the nonuniformity of the base doping, the lower is the offset voltage of the HBT.

Original languageEnglish
Pages (from-to)463-465
Number of pages3
JournalApplied Physics Letters
Volume57
Issue number5
DOIs
StatePublished - 1990

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