@inproceedings{bd15bcc2e62f47b0af302751bdf8c8ac,
title = "E-Band Power Amplifier and Low-Noise Amplifier in 100-nm GaAs pHEMT Technology",
abstract = "E-band power amplifier (PA) and low-noise amplifier (LNA) are realized using WIN 100-nm GaAs pHEMT technology. Designed at 80 GHz, the PA is a two-stage common-source amplifier, whereas the LNA is a single-stage common-source amplifier. Measurement results show that the PA exhibits 13.2-dB gain, 19.9-dBm saturation power, and 19.2\% peak PAE at 80 GHz. On the other hand, the measured gain and noise figure of the LNA at 80 GHz are 8.3 dB and 5.1 dB, respectively. The measured noise figure is as low as 3.4 dB at 82.5 GHz.",
keywords = "GaAs pHEMT, low-noise amplifier, millimeter wave, power amplifier",
author = "Liu, \{Jen Ying\} and Chiang, \{Yi Hung\} and Fu, \{Jia Shiang\}",
note = "Publisher Copyright: {\textcopyright} 2024 IEEE.; 2024 IEEE Asia-Pacific Microwave Conference, APMC 2024 ; Conference date: 17-11-2024 Through 20-11-2024",
year = "2024",
doi = "10.1109/APMC60911.2024.10867629",
language = "???core.languages.en\_GB???",
series = "Asia-Pacific Microwave Conference Proceedings, APMC",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "1245--1247",
booktitle = "2024 Asia-Pacific Microwave Conference",
}