Dynamics carrier relaxation in InGaN/GaN multiple quantum well structures

Shih Wei Feng; Yung Chen Cheng; Yi Yin Chung; C. W. Liu; Ming Hua Mao; Chih Chung Yang; Yen Sheng Lin; Kung Jeng Ma; Jen Inn Chyi

doi:10.1117/12.470417

Dynamics carrier relaxation in InGaN/GaN multiple quantum well structures

Shih Wei Feng, Yung Chen Cheng, Yi Yin Chung, C. W. Liu, Ming Hua Mao, Chih Chung Yang, Yen Sheng Lin, Kung Jeng Ma, Jen Inn Chyi

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

We report the fast and slow decay lifetimes of multi-component photoluminescence (PL) intensity decays in the time-resolved photoluminescence measurements at the room temperature and a low temperature (12K). The fast decay component was essentially due to carrier dynamics, that is, carrier transport from weakly localized to localized states. Such a carrier transport process results in extremely long PL decay time (up to almost 120 ns) for strongly localized states at the low temperature. At room temperature, because of thermal energy and hence carrier escape from strongly localized states, effective lifetimes becomes shorter.

Original language	English
Pages (from-to)	169-172
Number of pages	4
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	4643
DOIs	https://doi.org/10.1117/12.470417
State	Published - 2002

Keywords

Carrier dynamics
Carrier transport
InGaN/GaN quantum well
Localized states

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10.1117/12.470417

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title = "Dynamics carrier relaxation in InGaN/GaN multiple quantum well structures",

abstract = "We report the fast and slow decay lifetimes of multi-component photoluminescence (PL) intensity decays in the time-resolved photoluminescence measurements at the room temperature and a low temperature (12K). The fast decay component was essentially due to carrier dynamics, that is, carrier transport from weakly localized to localized states. Such a carrier transport process results in extremely long PL decay time (up to almost 120 ns) for strongly localized states at the low temperature. At room temperature, because of thermal energy and hence carrier escape from strongly localized states, effective lifetimes becomes shorter.",

keywords = "Carrier dynamics, Carrier transport, InGaN/GaN quantum well, Localized states",

author = "Feng, {Shih Wei} and Cheng, {Yung Chen} and Chung, {Yi Yin} and Liu, {C. W.} and Mao, {Ming Hua} and Yang, {Chih Chung} and Lin, {Yen Sheng} and Ma, {Kung Jeng} and Chyi, {Jen Inn}",

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T1 - Dynamics carrier relaxation in InGaN/GaN multiple quantum well structures

AU - Feng, Shih Wei

AU - Cheng, Yung Chen

AU - Chung, Yi Yin

AU - Liu, C. W.

AU - Mao, Ming Hua

AU - Yang, Chih Chung

AU - Lin, Yen Sheng

AU - Ma, Kung Jeng

AU - Chyi, Jen Inn

PY - 2002

Y1 - 2002

N2 - We report the fast and slow decay lifetimes of multi-component photoluminescence (PL) intensity decays in the time-resolved photoluminescence measurements at the room temperature and a low temperature (12K). The fast decay component was essentially due to carrier dynamics, that is, carrier transport from weakly localized to localized states. Such a carrier transport process results in extremely long PL decay time (up to almost 120 ns) for strongly localized states at the low temperature. At room temperature, because of thermal energy and hence carrier escape from strongly localized states, effective lifetimes becomes shorter.

AB - We report the fast and slow decay lifetimes of multi-component photoluminescence (PL) intensity decays in the time-resolved photoluminescence measurements at the room temperature and a low temperature (12K). The fast decay component was essentially due to carrier dynamics, that is, carrier transport from weakly localized to localized states. Such a carrier transport process results in extremely long PL decay time (up to almost 120 ns) for strongly localized states at the low temperature. At room temperature, because of thermal energy and hence carrier escape from strongly localized states, effective lifetimes becomes shorter.

KW - Carrier dynamics

KW - Carrier transport

KW - InGaN/GaN quantum well

KW - Localized states

UR - http://www.scopus.com/inward/record.url?scp=0036029035&partnerID=8YFLogxK

U2 - 10.1117/12.470417

DO - 10.1117/12.470417

M3 - 期刊論文

AN - SCOPUS:0036029035

SN - 0277-786X

VL - 4643

SP - 169

EP - 172

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

ER -

Dynamics carrier relaxation in InGaN/GaN multiple quantum well structures

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Keywords

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