Dynamic analysis of high-power and high-speed near-ballistic unitraveling carrier photodiodes at W-band

Y. S. Wu, J. W. Shi

Research output: Contribution to journalArticlepeer-review

41 Scopus citations

Abstract

In this letter, we demonstrate and analyze the high-speed and high-power performance of a back-illuminated near-ballistic unitraveling-carrier photodiode (PD) at TV-band. We utilize a three-port equivalent-circuit-modeling technique to show that the extracted average electron drift velocity in the whole epi-structure is around 5 × 107 cm/s, which corresponds to an ultrahigh transit time limited bandwidth (∼400 GHz). Such high internal bandwidth means that the demonstrated device can thus release the burden imposed on downscaling the device active area and epi-layer thickness for achieving ultrahigh-speed performance of PDs. With a collector thickness of 410 nm and an active area of 64 μm2, we can achieve a wide 3-dB bandwidth (120 GHz), and high saturation current bandwidth product performance (120 GHz, 24.6 mA, 2952 mAGHz) under 25 Ω loading at W-band.

Original languageEnglish
Pages (from-to)1160-1162
Number of pages3
JournalIEEE Photonics Technology Letters
Volume20
Issue number13
DOIs
StatePublished - 1 Jul 2008

Keywords

  • High-power photodiode (PD)
  • Photodiodes (PDs)
  • W-band

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