Double-heterojunction pseudomorphic AlGaAs/In0.15Ga0.85As HEMT and its short-channel effects

Chia Song Wu; Yi Jen Chan; Chu Dong Chen; Tien Min Chuang; Feng Yuh Juang; Chung Chi Chang; Jen Inn Chyi

doi:10.1016/0038-1101(94)00105-O

Double-heterojunction pseudomorphic AlGaAs/In_0.15Ga_0.85As HEMT and its short-channel effects

Chia Song Wu, Yi Jen Chan, Chu Dong Chen, Tien Min Chuang, Feng Yuh Juang, Chung Chi Chang, Jen Inn Chyi

Department of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

AlGaAs/In_0.15Ga_0.85As double-heterojunction pseudimorphic high electron mobility transistors (DH-PHEMTs) were fabricated by the deep-UV lithographic technique. 0.6 μm gate-length devices demonstrated a full channel current of 300 mA/mm at 300 K and 420 mA/mm at 77 K respectively, which is 1.5 times higher than that of single-heterojunction (SH) PHEMTs[1]. D.C. I-V characteristics showed a peak extrinsic transconductance of 230 and 330 mS/mm at 300 and 77 K, respectively. Microwave characteristics revealed a current gain cutoff frequency (f_T) of 16 GHz and a maximum oscillation frequency (f_max) of 61 GHz at 300 K. Due to a better carrier confinement in this double-heterostructure, short channel effects are less significant as compared to the single-heterostructure HEMTs.

Original language	English
Pages (from-to)	377-381
Number of pages	5
Journal	Solid-State Electronics
Volume	38
Issue number	2
DOIs	https://doi.org/10.1016/0038-1101(94)00105-O
State	Published - Feb 1995

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@article{5ceeed7c70e340709a78f25098f9e79e,

title = "Double-heterojunction pseudomorphic AlGaAs/In0.15Ga0.85As HEMT and its short-channel effects",

abstract = "AlGaAs/In0.15Ga0.85As double-heterojunction pseudimorphic high electron mobility transistors (DH-PHEMTs) were fabricated by the deep-UV lithographic technique. 0.6 μm gate-length devices demonstrated a full channel current of 300 mA/mm at 300 K and 420 mA/mm at 77 K respectively, which is 1.5 times higher than that of single-heterojunction (SH) PHEMTs[1]. D.C. I-V characteristics showed a peak extrinsic transconductance of 230 and 330 mS/mm at 300 and 77 K, respectively. Microwave characteristics revealed a current gain cutoff frequency (fT) of 16 GHz and a maximum oscillation frequency (fmax) of 61 GHz at 300 K. Due to a better carrier confinement in this double-heterostructure, short channel effects are less significant as compared to the single-heterostructure HEMTs.",

author = "Wu, {Chia Song} and Chan, {Yi Jen} and Chen, {Chu Dong} and Chuang, {Tien Min} and Juang, {Feng Yuh} and Chang, {Chung Chi} and Chyi, {Jen Inn}",

note = "Funding Information: Acknowledgements--The author would like to thank Mr Hwann-Kaeo Chiou and Dr Chi-Yang Chang for microwave measurement. Mr Ti-H Gan for his contribution on MDS simulations. This work at NCU was supported by National Science Council (NSC82-0404-E-008-103, 83-0404-E-008-005).",

year = "1995",

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doi = "10.1016/0038-1101(94)00105-O",

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volume = "38",

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TY - JOUR

T1 - Double-heterojunction pseudomorphic AlGaAs/In0.15Ga0.85As HEMT and its short-channel effects

AU - Wu, Chia Song

AU - Chan, Yi Jen

AU - Chen, Chu Dong

AU - Chuang, Tien Min

AU - Juang, Feng Yuh

AU - Chang, Chung Chi

AU - Chyi, Jen Inn

N1 - Funding Information: Acknowledgements--The author would like to thank Mr Hwann-Kaeo Chiou and Dr Chi-Yang Chang for microwave measurement. Mr Ti-H Gan for his contribution on MDS simulations. This work at NCU was supported by National Science Council (NSC82-0404-E-008-103, 83-0404-E-008-005).

PY - 1995/2

Y1 - 1995/2

N2 - AlGaAs/In0.15Ga0.85As double-heterojunction pseudimorphic high electron mobility transistors (DH-PHEMTs) were fabricated by the deep-UV lithographic technique. 0.6 μm gate-length devices demonstrated a full channel current of 300 mA/mm at 300 K and 420 mA/mm at 77 K respectively, which is 1.5 times higher than that of single-heterojunction (SH) PHEMTs[1]. D.C. I-V characteristics showed a peak extrinsic transconductance of 230 and 330 mS/mm at 300 and 77 K, respectively. Microwave characteristics revealed a current gain cutoff frequency (fT) of 16 GHz and a maximum oscillation frequency (fmax) of 61 GHz at 300 K. Due to a better carrier confinement in this double-heterostructure, short channel effects are less significant as compared to the single-heterostructure HEMTs.

AB - AlGaAs/In0.15Ga0.85As double-heterojunction pseudimorphic high electron mobility transistors (DH-PHEMTs) were fabricated by the deep-UV lithographic technique. 0.6 μm gate-length devices demonstrated a full channel current of 300 mA/mm at 300 K and 420 mA/mm at 77 K respectively, which is 1.5 times higher than that of single-heterojunction (SH) PHEMTs[1]. D.C. I-V characteristics showed a peak extrinsic transconductance of 230 and 330 mS/mm at 300 and 77 K, respectively. Microwave characteristics revealed a current gain cutoff frequency (fT) of 16 GHz and a maximum oscillation frequency (fmax) of 61 GHz at 300 K. Due to a better carrier confinement in this double-heterostructure, short channel effects are less significant as compared to the single-heterostructure HEMTs.

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U2 - 10.1016/0038-1101(94)00105-O

DO - 10.1016/0038-1101(94)00105-O

M3 - 期刊論文

AN - SCOPUS:0029250135

VL - 38

SP - 377

EP - 381

JO - Solid-State Electronics

JF - Solid-State Electronics

SN - 0038-1101

IS - 2

ER -

Double-heterojunction pseudomorphic AlGaAs/In0.15Ga0.85As HEMT and its short-channel effects

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Double-heterojunction pseudomorphic AlGaAs/In_0.15Ga_0.85As HEMT and its short-channel effects