Double-heterojunction pseudomorphic AlGaAs/In0.15Ga0.85As HEMT and its short-channel effects

Chia Song Wu, Yi Jen Chan, Chu Dong Chen, Tien Min Chuang, Feng Yuh Juang, Chung Chi Chang, Jen Inn Chyi

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

AlGaAs/In0.15Ga0.85As double-heterojunction pseudimorphic high electron mobility transistors (DH-PHEMTs) were fabricated by the deep-UV lithographic technique. 0.6 μm gate-length devices demonstrated a full channel current of 300 mA/mm at 300 K and 420 mA/mm at 77 K respectively, which is 1.5 times higher than that of single-heterojunction (SH) PHEMTs[1]. D.C. I-V characteristics showed a peak extrinsic transconductance of 230 and 330 mS/mm at 300 and 77 K, respectively. Microwave characteristics revealed a current gain cutoff frequency (fT) of 16 GHz and a maximum oscillation frequency (fmax) of 61 GHz at 300 K. Due to a better carrier confinement in this double-heterostructure, short channel effects are less significant as compared to the single-heterostructure HEMTs.

Original languageEnglish
Pages (from-to)377-381
Number of pages5
JournalSolid-State Electronics
Volume38
Issue number2
DOIs
StatePublished - Feb 1995

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