## Abstract

This paper uses the C++ to develop an adapted band matrix solver to simulate the i-v curve and the drain current of the 2-D double-gate n-channel MOSFET, including different doping concentrations which from 5×10 (cm ^{-3}) to 5×10 (cm^{-3}) and channel thickness which from 5 nm to 15 nm. And it discusses the threshold voltage from the i-v_{g} curve and selects the more appropriate doping concentration and channel thickness to complete the following experiments. And then it simulates if-vg curve to determine threshold voltage which can present the channel on-off situation and calculates drain current which is in different gate voltage. It also can simulate the electric potential of the x-axis and y-axis. In the figure of the electric potential we can obtain the depletion width. It also analyzes the subthreshold, the linear and the saturation region in i-v curve, and we can find out the values of sub-threshold swing in the subthreshold region of the i-v curve and the value of the drain current in the saturation region of the i-v curve. It compares the results with the other reference papers. Finally, the equations of the threshold voltage can be developed, and we calculate the threshold voltage of double-gate n-channel MOSFET. The result obtained by the equation of the threshold voltage will be compared with result by 2-D simulation. The depletion width can be obtained as an analytical equation. The analytical depletion width can be verified by the figure of the x-axis and y-axis electric potential from 2-D simulation. The 2-D simulation also verifies the result with the drain current equation which is obtained by Pois-son's equation. For circuit application, an inverter including a double-gate n-channel MOSFET and a 100kΩ resistor will be used to simulate the v _{o}-v_{i} characteristics and analyzes the parameters of the inverter (e.g. V_{Oh}, V_{Ol}, V_{ih}, V_{il}, V_{S}), and the noise margin (e.g. NM_{L}, NM_{H}) will be calculated in order to determine the inverter's performance and quality.

Original language | English |
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Title of host publication | Proceedings - RSM 2013 |

Subtitle of host publication | 2013 IEEE Regional Symposium on Micro and Nano Electronics |

Pages | 410-413 |

Number of pages | 4 |

DOIs | |

State | Published - 2013 |

Event | 2013 IEEE Regional Symposium on Micro and Nano Electronics, RSM 2013 - Langkawi, Malaysia Duration: 25 Sep 2013 → 27 Sep 2013 |

### Publication series

Name | Proceedings - RSM 2013: 2013 IEEE Regional Symposium on Micro and Nano Electronics |
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### Conference

Conference | 2013 IEEE Regional Symposium on Micro and Nano Electronics, RSM 2013 |
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Country/Territory | Malaysia |

City | Langkawi |

Period | 25/09/13 → 27/09/13 |

## Keywords

- C++
- Double gate
- Junctionless MOSFET
- MOSFET
- semiconductor simulation