Disturbance fault testing on various NAND flash memories

Chih Sheng Hou, Jin Fu Li

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Due to the specific mechanism of functional operations, flash memories are prone to disturbance faults. Furthermore, different NAND flash memories might have some differences on the array organizations and the supported functional operations. In this paper, therefore, test algorithms for covering the disturbance faults in various types of NAND flash memories are developed.

Original languageEnglish
Title of host publicationProceedings - 2012 17th IEEE European Test Symposium, ETS 2012
DOIs
StatePublished - 2012
Event2012 17th IEEE European Test Symposium, ETS 2012 - Annecy, France
Duration: 28 May 20121 Jun 2012

Publication series

NameProceedings - 2012 17th IEEE European Test Symposium, ETS 2012

Conference

Conference2012 17th IEEE European Test Symposium, ETS 2012
Country/TerritoryFrance
CityAnnecy
Period28/05/121/06/12

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