Disclosing AlN ceramic substrate process failure mode and effect analysis

Due to the excellent thermal conductivity and physical and chemical characteristics of aluminium nitride (AlN) ceramic substrate, it can be useful for electronic applications. Furthermore, it is an ideal substrate material for the future. In this paper, we analyze and compare the traditional process of AlN ceramic substrate preparation methods (thin-film, thick-film, and direct bonded copper methods). The thin-film method requires precision instruments such as sputtering machines, but the equipment is expensive and the manufacturing cost is high. The direct bonded copper method requires a high temperature (approximately 1070 °C) to sinter the copper film onto the surface of the ceramic substrate. After this is finished, the conductive film must undergo some complicated process to obtain the products for both processes. Although the thick-film method is the easiest to undertake, it is limited in its process capability and cannot meet the development needs of the electronics industry in the future. Accordingly, this paper presents an investigation of the laser plated copper method to establish its advantages and disadvantages. This study compares traditional AlN metallisation with the laser radiation plated copper method, and discusses the application of three different methods, as follows: the selective chemical copper, selective electroless nickel, and electroless gold methods. These applications could achieve process simplification, precision design, easy production of three-dimensional extrusions, and green production processes. This research establishes and designs AlN metallisation using the failure mode and effect analysis (FMEA) model, by analysing possible causes and solutions in advance. The information herein obtained can be used as the reference for laser-enhanced AlN metallisation, to avoid potential problems and product damage during mass production.