Direct measurement of piezoelectric field in In0.23Ga0.77N/GaN multiple quantum wells by electrotransmission spectroscopy

C. Y. Lai; T. M. Hsu; W. H. Chang; K. U. Tseng; C. M. Lee; C. C. Chuo; J. I. Chyi

doi:10.1063/1.1426237

Direct measurement of piezoelectric field in In_0.23Ga_0.77N/GaN multiple quantum wells by electrotransmission spectroscopy

C. Y. Lai, T. M. Hsu, W. H. Chang, K. U. Tseng, C. M. Lee, C. C. Chuo, J. I. Chyi

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Abstract

In this communication, we present experimental evidence of the piezoelectric-field-induced quantum-confined Stark effect on In_0.23Ga_0.77N/GaN multiple quantum wells. The optical transitions in In_0.23Ga_0.77N/GaN p-i-n multiple quantum wells were studied by using electrotransmission (ET) at room temperature. Quantum-well-related signals are well resolved in our ET spectra. Since the strong internal electric field breaks the symmetry of the quantum wells, both the allowed and the forbidden transitions are observed. Clear energy blueshifts in accordance with increasing reversed bias are observed in ET spectra. The strength of piezoelectric field is found to be 1.7-1.9 MV/cm in the In_0.23Ga_0.77N strain quantum well layer, which is comparable with the measurement reported in the literature. We have shown experimentally how the piezoelectric field affects the energy shift for the strained multiple quantum wells.

Original language	English
Pages (from-to)	531-533
Number of pages	3
Journal	Journal of Applied Physics
Volume	91
Issue number	1
DOIs	https://doi.org/10.1063/1.1426237
State	Published - 1 Jan 2002

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title = "Direct measurement of piezoelectric field in In0.23Ga0.77N/GaN multiple quantum wells by electrotransmission spectroscopy",

abstract = "In this communication, we present experimental evidence of the piezoelectric-field-induced quantum-confined Stark effect on In0.23Ga0.77N/GaN multiple quantum wells. The optical transitions in In0.23Ga0.77N/GaN p-i-n multiple quantum wells were studied by using electrotransmission (ET) at room temperature. Quantum-well-related signals are well resolved in our ET spectra. Since the strong internal electric field breaks the symmetry of the quantum wells, both the allowed and the forbidden transitions are observed. Clear energy blueshifts in accordance with increasing reversed bias are observed in ET spectra. The strength of piezoelectric field is found to be 1.7-1.9 MV/cm in the In0.23Ga0.77N strain quantum well layer, which is comparable with the measurement reported in the literature. We have shown experimentally how the piezoelectric field affects the energy shift for the strained multiple quantum wells.",

author = "Lai, {C. Y.} and Hsu, {T. M.} and Chang, {W. H.} and Tseng, {K. U.} and Lee, {C. M.} and Chuo, {C. C.} and Chyi, {J. I.}",

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TY - JOUR

T1 - Direct measurement of piezoelectric field in In0.23Ga0.77N/GaN multiple quantum wells by electrotransmission spectroscopy

AU - Lai, C. Y.

AU - Hsu, T. M.

AU - Chang, W. H.

AU - Tseng, K. U.

AU - Lee, C. M.

AU - Chuo, C. C.

AU - Chyi, J. I.

PY - 2002/1/1

Y1 - 2002/1/1

N2 - In this communication, we present experimental evidence of the piezoelectric-field-induced quantum-confined Stark effect on In0.23Ga0.77N/GaN multiple quantum wells. The optical transitions in In0.23Ga0.77N/GaN p-i-n multiple quantum wells were studied by using electrotransmission (ET) at room temperature. Quantum-well-related signals are well resolved in our ET spectra. Since the strong internal electric field breaks the symmetry of the quantum wells, both the allowed and the forbidden transitions are observed. Clear energy blueshifts in accordance with increasing reversed bias are observed in ET spectra. The strength of piezoelectric field is found to be 1.7-1.9 MV/cm in the In0.23Ga0.77N strain quantum well layer, which is comparable with the measurement reported in the literature. We have shown experimentally how the piezoelectric field affects the energy shift for the strained multiple quantum wells.

AB - In this communication, we present experimental evidence of the piezoelectric-field-induced quantum-confined Stark effect on In0.23Ga0.77N/GaN multiple quantum wells. The optical transitions in In0.23Ga0.77N/GaN p-i-n multiple quantum wells were studied by using electrotransmission (ET) at room temperature. Quantum-well-related signals are well resolved in our ET spectra. Since the strong internal electric field breaks the symmetry of the quantum wells, both the allowed and the forbidden transitions are observed. Clear energy blueshifts in accordance with increasing reversed bias are observed in ET spectra. The strength of piezoelectric field is found to be 1.7-1.9 MV/cm in the In0.23Ga0.77N strain quantum well layer, which is comparable with the measurement reported in the literature. We have shown experimentally how the piezoelectric field affects the energy shift for the strained multiple quantum wells.

UR - http://www.scopus.com/inward/record.url?scp=0036137187&partnerID=8YFLogxK

U2 - 10.1063/1.1426237

DO - 10.1063/1.1426237

M3 - 期刊論文

AN - SCOPUS:0036137187

SN - 0021-8979

VL - 91

SP - 531

EP - 533

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 1

ER -

Direct measurement of piezoelectric field in In0.23Ga0.77N/GaN multiple quantum wells by electrotransmission spectroscopy

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Direct measurement of piezoelectric field in In_0.23Ga_0.77N/GaN multiple quantum wells by electrotransmission spectroscopy