Direct current characteristics of AlGaN/GaN high-electron-mobility transistors with different channel widths

Wei Chun Lin; Yi Nan Zhong; Ming Yan Tsai; Wei Cheng Ho; Yi Hsuan Yu; Yue Ming Hsin

doi:10.1149/2.0291906jss

Direct current characteristics of AlGaN/GaN high-electron-mobility transistors with different channel widths

Wei Chun Lin, Yi Nan Zhong, Ming Yan Tsai, Wei Cheng Ho, Yi Hsuan Yu, Yue Ming Hsin

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

AlGaN/GaN high-electron-mobility transistors with different channel configurations were fabricated and characterized. Channel configuration was designed to have the source, gate, and drain metal contacts of the same size but with different channel widths, which was achieved by the current blocking region. Current density, subthreshold swing, and transconductance (g_m) improved with the decreasing channel width. A significant improvement was observed in g_m because of a large gate width (WG) to channel width (Wchannel) ratio. A device with a W_G/W_channel of 4 has a g_m of 239 mS/mm, whereas a device with a W_G/W_channel of 1 has a g_m of 127 mS/mm.

Original language	English
Pages (from-to)	Q123-Q125
Journal	ECS Journal of Solid State Science and Technology
Volume	8
Issue number	6
DOIs	https://doi.org/10.1149/2.0291906jss
State	Published - 2019

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title = "Direct current characteristics of AlGaN/GaN high-electron-mobility transistors with different channel widths",

abstract = "AlGaN/GaN high-electron-mobility transistors with different channel configurations were fabricated and characterized. Channel configuration was designed to have the source, gate, and drain metal contacts of the same size but with different channel widths, which was achieved by the current blocking region. Current density, subthreshold swing, and transconductance (gm) improved with the decreasing channel width. A significant improvement was observed in gm because of a large gate width (WG) to channel width (Wchannel) ratio. A device with a WG/Wchannel of 4 has a gm of 239 mS/mm, whereas a device with a WG/Wchannel of 1 has a gm of 127 mS/mm.",

author = "Lin, {Wei Chun} and Zhong, {Yi Nan} and Tsai, {Ming Yan} and Ho, {Wei Cheng} and Yu, {Yi Hsuan} and Hsin, {Yue Ming}",

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TY - JOUR

T1 - Direct current characteristics of AlGaN/GaN high-electron-mobility transistors with different channel widths

AU - Lin, Wei Chun

AU - Zhong, Yi Nan

AU - Tsai, Ming Yan

AU - Ho, Wei Cheng

AU - Yu, Yi Hsuan

AU - Hsin, Yue Ming

PY - 2019

Y1 - 2019

N2 - AlGaN/GaN high-electron-mobility transistors with different channel configurations were fabricated and characterized. Channel configuration was designed to have the source, gate, and drain metal contacts of the same size but with different channel widths, which was achieved by the current blocking region. Current density, subthreshold swing, and transconductance (gm) improved with the decreasing channel width. A significant improvement was observed in gm because of a large gate width (WG) to channel width (Wchannel) ratio. A device with a WG/Wchannel of 4 has a gm of 239 mS/mm, whereas a device with a WG/Wchannel of 1 has a gm of 127 mS/mm.

AB - AlGaN/GaN high-electron-mobility transistors with different channel configurations were fabricated and characterized. Channel configuration was designed to have the source, gate, and drain metal contacts of the same size but with different channel widths, which was achieved by the current blocking region. Current density, subthreshold swing, and transconductance (gm) improved with the decreasing channel width. A significant improvement was observed in gm because of a large gate width (WG) to channel width (Wchannel) ratio. A device with a WG/Wchannel of 4 has a gm of 239 mS/mm, whereas a device with a WG/Wchannel of 1 has a gm of 127 mS/mm.

UR - http://www.scopus.com/inward/record.url?scp=85072015298&partnerID=8YFLogxK

U2 - 10.1149/2.0291906jss

DO - 10.1149/2.0291906jss

M3 - 期刊論文

AN - SCOPUS:85072015298

SN - 2162-8769

VL - 8

SP - Q123-Q125

JO - ECS Journal of Solid State Science and Technology

JF - ECS Journal of Solid State Science and Technology

IS - 6

ER -

Direct current characteristics of AlGaN/GaN high-electron-mobility transistors with different channel widths

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