Diffusion mechanism and photoluminescence of erbium in GaN

Yi Sheng Ting, Chii Chang Chen, Chien Chieh Lee, Gou Chung Chi, Tapas Kumar Chini, Purushottam Chakraborty, Hui Wen Chuang, Jian Shihn Tsang, Cheng Ta Kuo, Wen Chung Tsai, Shu Han Chen, Jen Inn Chyi

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8 Scopus citations


Erbium has been diffused into GaN for the first time. A weak spontaneous emission is observed in the photoluminescence spectra after the diffusion process during 168 h at 800 °C under N2 atmosphere. The diffusion coefficient of erbium in GaN is obtained in Arrenhius expression to be D = 1.8 ± 1.3 × 10-12exp(-1 ± 0.4eV/kT) cm2/s. The result shows that the Er diffusion mechanism might be an interstitial-assisted process. The luminescence characteristics of the Er-diffused GaN is compared with the Er-implanted GaN. The methods to enhance the emission intensity of the Er-diffused GaN are discussed.

Original languageEnglish
Pages (from-to)515-518
Number of pages4
JournalOptical Materials
Issue number3
StatePublished - Dec 2003


  • Diffusion
  • GaN
  • Ion implantation
  • Rare earth


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