Diffusion mechanism and photoluminescence of erbium in GaN

Yi Sheng Ting; Chii Chang Chen; Chien Chieh Lee; Gou Chung Chi; Tapas Kumar Chini; Purushottam Chakraborty; Hui Wen Chuang; Jian Shihn Tsang; Cheng Ta Kuo; Wen Chung Tsai; Shu Han Chen; Jen Inn Chyi

doi:10.1016/S0925-3467(03)00086-7

Diffusion mechanism and photoluminescence of erbium in GaN

Yi Sheng Ting, Chii Chang Chen, Chien Chieh Lee, Gou Chung Chi, Tapas Kumar Chini, Purushottam Chakraborty, Hui Wen Chuang, Jian Shihn Tsang, Cheng Ta Kuo, Wen Chung Tsai, Shu Han Chen, Jen Inn Chyi

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Abstract

Erbium has been diffused into GaN for the first time. A weak spontaneous emission is observed in the photoluminescence spectra after the diffusion process during 168 h at 800 °C under N₂ atmosphere. The diffusion coefficient of erbium in GaN is obtained in Arrenhius expression to be D = 1.8 ± 1.3 × 10^-12exp(-1 ± 0.4eV/kT) cm²/s. The result shows that the Er diffusion mechanism might be an interstitial-assisted process. The luminescence characteristics of the Er-diffused GaN is compared with the Er-implanted GaN. The methods to enhance the emission intensity of the Er-diffused GaN are discussed.

Original language	English
Pages (from-to)	515-518
Number of pages	4
Journal	Optical Materials
Volume	24
Issue number	3
DOIs	https://doi.org/10.1016/S0925-3467(03)00086-7
State	Published - Dec 2003

Keywords

Diffusion
GaN
Ion implantation
Rare earth

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10.1016/S0925-3467(03)00086-7

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@article{11ece471b3b049cdb7de16e7d49e3e8b,

title = "Diffusion mechanism and photoluminescence of erbium in GaN",

abstract = "Erbium has been diffused into GaN for the first time. A weak spontaneous emission is observed in the photoluminescence spectra after the diffusion process during 168 h at 800 °C under N2 atmosphere. The diffusion coefficient of erbium in GaN is obtained in Arrenhius expression to be D = 1.8 ± 1.3 × 10-12exp(-1 ± 0.4eV/kT) cm2/s. The result shows that the Er diffusion mechanism might be an interstitial-assisted process. The luminescence characteristics of the Er-diffused GaN is compared with the Er-implanted GaN. The methods to enhance the emission intensity of the Er-diffused GaN are discussed.",

keywords = "Diffusion, GaN, Ion implantation, Rare earth",

author = "Ting, {Yi Sheng} and Chen, {Chii Chang} and Lee, {Chien Chieh} and Chi, {Gou Chung} and Chini, {Tapas Kumar} and Purushottam Chakraborty and Chuang, {Hui Wen} and Tsang, {Jian Shihn} and Kuo, {Cheng Ta} and Tsai, {Wen Chung} and Chen, {Shu Han} and Chyi, {Jen Inn}",

note = "Funding Information: The work was supported by the grants received from the National Science Council, Taiwan and from MOE Program for Promoting Academic Excellence of Universities under the grant number 91-E-FA06-1-4.",

year = "2003",

month = dec,

doi = "10.1016/S0925-3467(03)00086-7",

language = "???core.languages.en_GB???",

volume = "24",

pages = "515--518",

journal = "Optical Materials",

issn = "0925-3467",

number = "3",

}

TY - JOUR

T1 - Diffusion mechanism and photoluminescence of erbium in GaN

AU - Ting, Yi Sheng

AU - Chen, Chii Chang

AU - Lee, Chien Chieh

AU - Chi, Gou Chung

AU - Chini, Tapas Kumar

AU - Chakraborty, Purushottam

AU - Chuang, Hui Wen

AU - Tsang, Jian Shihn

AU - Kuo, Cheng Ta

AU - Tsai, Wen Chung

AU - Chen, Shu Han

AU - Chyi, Jen Inn

N1 - Funding Information: The work was supported by the grants received from the National Science Council, Taiwan and from MOE Program for Promoting Academic Excellence of Universities under the grant number 91-E-FA06-1-4.

PY - 2003/12

Y1 - 2003/12

N2 - Erbium has been diffused into GaN for the first time. A weak spontaneous emission is observed in the photoluminescence spectra after the diffusion process during 168 h at 800 °C under N2 atmosphere. The diffusion coefficient of erbium in GaN is obtained in Arrenhius expression to be D = 1.8 ± 1.3 × 10-12exp(-1 ± 0.4eV/kT) cm2/s. The result shows that the Er diffusion mechanism might be an interstitial-assisted process. The luminescence characteristics of the Er-diffused GaN is compared with the Er-implanted GaN. The methods to enhance the emission intensity of the Er-diffused GaN are discussed.

AB - Erbium has been diffused into GaN for the first time. A weak spontaneous emission is observed in the photoluminescence spectra after the diffusion process during 168 h at 800 °C under N2 atmosphere. The diffusion coefficient of erbium in GaN is obtained in Arrenhius expression to be D = 1.8 ± 1.3 × 10-12exp(-1 ± 0.4eV/kT) cm2/s. The result shows that the Er diffusion mechanism might be an interstitial-assisted process. The luminescence characteristics of the Er-diffused GaN is compared with the Er-implanted GaN. The methods to enhance the emission intensity of the Er-diffused GaN are discussed.

KW - Diffusion

KW - GaN

KW - Ion implantation

KW - Rare earth

UR - http://www.scopus.com/inward/record.url?scp=0142094002&partnerID=8YFLogxK

U2 - 10.1016/S0925-3467(03)00086-7

DO - 10.1016/S0925-3467(03)00086-7

M3 - 期刊論文

AN - SCOPUS:0142094002

SN - 0925-3467

VL - 24

SP - 515

EP - 518

JO - Optical Materials

JF - Optical Materials

IS - 3

ER -

Diffusion mechanism and photoluminescence of erbium in GaN

Abstract

Keywords

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