Dielectric Material Technologies for 2-D Semiconductor Transistor Scaling

Yuxuan Cosmi Lin, Cheng Ming Lin, Hung Yu Chen, Sam Vaziri, Xinyu Bao, Wei Yen Woon, Han Wang, Szuya Sandy Liao

Research output: Contribution to journalArticlepeer-review

8 Scopus citations


The 2-D semiconductors have been recognized as promising channel materials for the ultimately scaled transistor technologies beyond silicon. An essential technology enabler for 2-D semiconductor electronics is the development of dielectric materials interfaced with 2-D semiconductors. In this review article, we overview different types of dielectric materials that are suitable for different application scenarios, including high-k gate dielectrics, low- k spacers, and thermal management materials under the paradigm of 2-D semiconductor electronics. A material selection guideline for dielectric materials and the key process technology modules are discussed in detail. A special emphasis is made on how each of the dielectric technologies may enable the further scaling and practical applications of 2-D semiconductor transistors. The state-of-the-art device technologies are summarized, and the remaining challenges toward practical applications are discussed from the industrial perspective.

Original languageEnglish
Pages (from-to)1454-1473
Number of pages20
JournalIEEE Transactions on Electron Devices
Issue number4
StatePublished - 1 Apr 2023


  • 2-D materials
  • Moore's law
  • dielectrics
  • field-effect transistor
  • insulator
  • microprocessing technology
  • nanoelectronics


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