Diagnosis of Resistive Nonvolatile-8T SRAMs

Yu Ting Li, Jin Fu Li, Chun Lung Hsu, Chi Tien Sun

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

Resistive nonvolatile static random access memory (SRAM) can preserve data in power down mode and provide fast power-on speed. A resistive nonvolatile 8T (Rnv8T) SRAM cell consists of a 6T SRAM cell, two memristive devices, and two transistors. RAM faults and memristor-related faults should be considered for the testing and diagnosis of Rnv8T SRAMs. In this paper, a diagnosis methodology is proposed to distinguish RAM faults and memristor-related faults.

Original languageEnglish
Title of host publicationProceedings - International SoC Design Conference 2018, ISOCC 2018
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages23-24
Number of pages2
ISBN (Electronic)9781538679609
DOIs
StatePublished - 22 Feb 2019
Event15th International SoC Design Conference, ISOCC 2018 - Daegu, Korea, Republic of
Duration: 12 Nov 201815 Nov 2018

Publication series

NameProceedings - International SoC Design Conference 2018, ISOCC 2018

Conference

Conference15th International SoC Design Conference, ISOCC 2018
Country/TerritoryKorea, Republic of
CityDaegu
Period12/11/1815/11/18

Keywords

  • Diagnosis
  • March test
  • Memristor
  • Nonvolatile SRAM

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