Projects per year
Abstract
Resistive nonvolatile static random access memory (SRAM) can preserve data in power down mode and provide fast power-on speed. A resistive nonvolatile 8T (Rnv8T) SRAM cell consists of a 6T SRAM cell, two memristive devices, and two transistors. RAM faults and memristor-related faults should be considered for the testing and diagnosis of Rnv8T SRAMs. In this paper, a diagnosis methodology is proposed to distinguish RAM faults and memristor-related faults.
Original language | English |
---|---|
Title of host publication | Proceedings - International SoC Design Conference 2018, ISOCC 2018 |
Publisher | Institute of Electrical and Electronics Engineers Inc. |
Pages | 23-24 |
Number of pages | 2 |
ISBN (Electronic) | 9781538679609 |
DOIs | |
State | Published - 2 Jul 2018 |
Event | 15th International SoC Design Conference, ISOCC 2018 - Daegu, Korea, Republic of Duration: 12 Nov 2018 → 15 Nov 2018 |
Publication series
Name | Proceedings - International SoC Design Conference 2018, ISOCC 2018 |
---|
Conference
Conference | 15th International SoC Design Conference, ISOCC 2018 |
---|---|
Country/Territory | Korea, Republic of |
City | Daegu |
Period | 12/11/18 → 15/11/18 |
Keywords
- Diagnosis
- March test
- Memristor
- Nonvolatile SRAM
Fingerprint
Dive into the research topics of 'Diagnosis of Resistive Nonvolatile-8T SRAMs'. Together they form a unique fingerprint.Projects
- 1 Finished
-
應用於三維積體電路可測性及可靠性設計技術-總計畫暨子計畫一:三維積體電路中堆疊式記憶體與晶粒間連接線可測性與可靠性技術
Li, J.-F. (PI)
1/05/15 → 31/07/16
Project: Research