Device stress evaluation of InAs/AlSb HEMT on silicon substrate with refractory iridium Schottky gate metal

Hsien Chin Chiu; Wen Yu Lin; Chia Yi Chou; Shih Hsien Yang; Kai Di Mai; Pei Chin Chiu; W. J. Hsueh; Jen Inn Chyi

doi:10.1016/j.mee.2015.01.017

Device stress evaluation of InAs/AlSb HEMT on silicon substrate with refractory iridium Schottky gate metal

Hsien Chin Chiu, Wen Yu Lin, Chia Yi Chou, Shih Hsien Yang, Kai Di Mai, Pei Chin Chiu, W. J. Hsueh, Jen Inn Chyi

Department of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

In this work, the 6-inch AlSb/InAs on Si (0 0 1) substrate is used to increase device integration and cost-effective purpose. The iridium (Ir)-gate was used for the InAs/AlSb on silicon substrate and temperature-dependent characteristics were also studied. The Ir-gate exhibited a superior metal work function which was beneficial for increasing the Schottky barrier height of InAs/AlSb on silicon heterostructures. Moreover, transmission electron microscopy, secondary ion mass spectrometry, and low frequency noise measurements were conducted to proof that the Ir-gated AlSb/InAs HEMT achieved the better stability of characteristics after self-heating and hot-carrier stresses.

Original language	English
Pages (from-to)	17-20
Number of pages	4
Journal	Microelectronic Engineering
Volume	138
DOIs	https://doi.org/10.1016/j.mee.2015.01.017
State	Published - 20 Apr 2015

Keywords

AlSb
Iridium
Schottky barrier height
Stability

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10.1016/j.mee.2015.01.017

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title = "Device stress evaluation of InAs/AlSb HEMT on silicon substrate with refractory iridium Schottky gate metal",

abstract = "In this work, the 6-inch AlSb/InAs on Si (0 0 1) substrate is used to increase device integration and cost-effective purpose. The iridium (Ir)-gate was used for the InAs/AlSb on silicon substrate and temperature-dependent characteristics were also studied. The Ir-gate exhibited a superior metal work function which was beneficial for increasing the Schottky barrier height of InAs/AlSb on silicon heterostructures. Moreover, transmission electron microscopy, secondary ion mass spectrometry, and low frequency noise measurements were conducted to proof that the Ir-gated AlSb/InAs HEMT achieved the better stability of characteristics after self-heating and hot-carrier stresses.",

keywords = "AlSb, Iridium, Schottky barrier height, Stability",

author = "Chiu, {Hsien Chin} and Lin, {Wen Yu} and Chou, {Chia Yi} and Yang, {Shih Hsien} and Mai, {Kai Di} and Chiu, {Pei Chin} and Hsueh, {W. J.} and Chyi, {Jen Inn}",

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TY - JOUR

T1 - Device stress evaluation of InAs/AlSb HEMT on silicon substrate with refractory iridium Schottky gate metal

AU - Chiu, Hsien Chin

AU - Lin, Wen Yu

AU - Chou, Chia Yi

AU - Yang, Shih Hsien

AU - Mai, Kai Di

AU - Chiu, Pei Chin

AU - Hsueh, W. J.

AU - Chyi, Jen Inn

PY - 2015/4/20

Y1 - 2015/4/20

N2 - In this work, the 6-inch AlSb/InAs on Si (0 0 1) substrate is used to increase device integration and cost-effective purpose. The iridium (Ir)-gate was used for the InAs/AlSb on silicon substrate and temperature-dependent characteristics were also studied. The Ir-gate exhibited a superior metal work function which was beneficial for increasing the Schottky barrier height of InAs/AlSb on silicon heterostructures. Moreover, transmission electron microscopy, secondary ion mass spectrometry, and low frequency noise measurements were conducted to proof that the Ir-gated AlSb/InAs HEMT achieved the better stability of characteristics after self-heating and hot-carrier stresses.

AB - In this work, the 6-inch AlSb/InAs on Si (0 0 1) substrate is used to increase device integration and cost-effective purpose. The iridium (Ir)-gate was used for the InAs/AlSb on silicon substrate and temperature-dependent characteristics were also studied. The Ir-gate exhibited a superior metal work function which was beneficial for increasing the Schottky barrier height of InAs/AlSb on silicon heterostructures. Moreover, transmission electron microscopy, secondary ion mass spectrometry, and low frequency noise measurements were conducted to proof that the Ir-gated AlSb/InAs HEMT achieved the better stability of characteristics after self-heating and hot-carrier stresses.

KW - AlSb

KW - Iridium

KW - Schottky barrier height

KW - Stability

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U2 - 10.1016/j.mee.2015.01.017

DO - 10.1016/j.mee.2015.01.017

M3 - 期刊論文

AN - SCOPUS:84921953279

SN - 0167-9317

VL - 138

SP - 17

EP - 20

JO - Microelectronic Engineering

JF - Microelectronic Engineering

ER -

Device stress evaluation of InAs/AlSb HEMT on silicon substrate with refractory iridium Schottky gate metal

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Keywords

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