Device processing for GaN high power electronics

S. J. Pearton, X. A. Cao, H. Cho, K. P. Lee, C. Monier, F. Ren, G. Dang, A. P. Zhang, W. Johnson, J. R. LaRoche, B. P. Gila, C. R. Abernathy, R. J. Shul, A. G. Baca, J. Han, J. I. Chyi, J. M. Van Hove

Research output: Contribution to journalArticlepeer-review


The improvements in developing process modules for GaN power devices are discussed. These processes include damage removal in dry etched n- and p-GaN, implant doping, novel gate dielectrics, isolation, improved Schottky and ohmic contacts of SiC for GaN/SiC structures. Implant doping is limited by residual impurities in the material which produces compensation. Dry etching with thermal and wet etch damage removal is necessary for most devices.

Original languageEnglish
Pages (from-to)T711-T719
JournalMaterials Research Society Symposium - Proceedings
StatePublished - 2000


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