The improvements in developing process modules for GaN power devices are discussed. These processes include damage removal in dry etched n- and p-GaN, implant doping, novel gate dielectrics, isolation, improved Schottky and ohmic contacts of SiC for GaN/SiC structures. Implant doping is limited by residual impurities in the material which produces compensation. Dry etching with thermal and wet etch damage removal is necessary for most devices.
|Journal||Materials Research Society Symposium - Proceedings|
|State||Published - 2000|