Abstract
In order to accomplish two-dimensional device simulation with a large number of nodes, in this paper we propose the device-partition method (DPM) to resolve the problem that the memory size of the simulation environment is insufficient. The idea of DPM is that the device can be divided into several parts and a matrix solver only solves one part at a time. DPM uses the iteration method to simulate the device. By continuous iteration, an accurate solution can be obtained. Hence, we use DPM to demonstrate the simulations of the MOSFET and the CMOS inverter. The simulation results of DPM and the coupled method (CM) are nearly approximate and correspond with the theory. Hence, DPM is a suitable method to develop a powerful simulation environment.
Original language | English |
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Pages (from-to) | 203-219 |
Number of pages | 17 |
Journal | International Journal of Numerical Modelling: Electronic Networks, Devices and Fields |
Volume | 18 |
Issue number | 3 |
DOIs | |
State | Published - May 2005 |
Keywords
- CMOS inverter
- Coupled method (CM)
- Device-partition method (DPM)
- Iteration method
- Memory size
- MOSFET