@article{1c20a59c4249406992c05fe1286dec60,
title = "Device characteristics of the GaN/InGaN-doped channel HFETs",
abstract = "First dc, small signal, and RF power characteristics of GaN/InGaN doped-channel heterojunction field effect transistors (HFETs) are reported. HFETs with a 1- μm gate length have demonstrated a maximum drain current of 272 mA/mm, a flat G m around 65 mS/mm in a V GS between -0.65 V and +2.0 V, and an on-state breakdown voltage over 50 V. Complete pinchoff was observed for a -3.5 V gate bias. Devices with a 1- μm gate length have exhibited an f T of 8 GHz and f max of 20 GHz. A saturated output power of 26 dBm was obtained at 1.9 GHz for a 1 μm × 1 mm device.",
keywords = "GaN, HFET, InGaN",
author = "Hsin, {Yue Ming} and Hsu, {Hung Tsao} and Chuo, {Chang Cheng} and Chyi, {Jen Inn}",
note = "Funding Information: Manuscript received July 16, 2001; revised August 6, 2001. This work was supported by the National Science Council of Taiwan, R.O.C. (NSC 89-2215-E-008-036) and the Taiwan Ministry of Education (89-E-FA06-1-4). The review of this letter was arranged by Editor D. Ritter. The authors are with the Department of Electrical Engineering, National Central University, Chung-Li, Taiwan 320, R.O.C. (e-mail: yhsin@ee.ncu.edu.tw). Publisher Item Identifier S 0741-3106(01)09405-8.",
year = "2001",
month = nov,
doi = "10.1109/55.962643",
language = "???core.languages.en_GB???",
volume = "22",
pages = "501--503",
journal = "IEEE Electron Device Letters",
issn = "0741-3106",
number = "11",
}