Device characteristics of the GaN/InGaN-doped channel HFETs

Yue Ming Hsin, Hung Tsao Hsu, Chang Cheng Chuo, Jen Inn Chyi

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First dc, small signal, and RF power characteristics of GaN/InGaN doped-channel heterojunction field effect transistors (HFETs) are reported. HFETs with a 1- μm gate length have demonstrated a maximum drain current of 272 mA/mm, a flat G m around 65 mS/mm in a V GS between -0.65 V and +2.0 V, and an on-state breakdown voltage over 50 V. Complete pinchoff was observed for a -3.5 V gate bias. Devices with a 1- μm gate length have exhibited an f T of 8 GHz and f max of 20 GHz. A saturated output power of 26 dBm was obtained at 1.9 GHz for a 1 μm × 1 mm device.

Original languageEnglish
Pages (from-to)501-503
Number of pages3
JournalIEEE Electron Device Letters
Issue number11
StatePublished - Nov 2001


  • GaN
  • HFET
  • InGaN


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