Device characteristics of InGaSb/AlSb high-hole-mobility FETs

Han Chieh Ho; Zon Yan Gao; Heng Kuang Lin; Pei Chin Chiu; Yue Ming Hsin; Jen Inn Chyi

doi:10.1109/LED.2012.2193656

Device characteristics of InGaSb/AlSb high-hole-mobility FETs

Han Chieh Ho, Zon Yan Gao, Heng Kuang Lin, Pei Chin Chiu, Yue Ming Hsin, Jen Inn Chyi

Department of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

This letter reports the effect of growth temperature on carrier transport characteristics in In _0.4Ga _0.6Sb/AlSb heterostructure and demonstrates that hole mobility was enhanced by eliminating a parallel conducting channel in the buffer layers. Based on optimized growth conditions, hole mobility as high as 1220 cm ²/Vs with carrier concentration of 1.3 × 10 ¹²cm ^-2 was achieved. A 0.2-μm-gate-length In _0.4Ga _0.6Sb/AlSb p-channel device exhibited a maximum drain current of 102 mA/mm, a peak transconductance of 92 mS/mm, and an on-state breakdown voltage over 3 V. The pinchoff was observed for a gate bias of 0.6 V at drain current of 1 mA/mm. The current-gain and power-gain cutoff frequencies were 15 and 20 GHz, respectively.

Original language	English
Article number	6199953
Pages (from-to)	964-966
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	33
Issue number	7
DOIs	https://doi.org/10.1109/LED.2012.2193656
State	Published - 2012

Keywords

Heterojunction field-effect transistors (HFETs)
InGaSb/AlSb

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title = "Device characteristics of InGaSb/AlSb high-hole-mobility FETs",

abstract = "This letter reports the effect of growth temperature on carrier transport characteristics in In 0.4Ga 0.6Sb/AlSb heterostructure and demonstrates that hole mobility was enhanced by eliminating a parallel conducting channel in the buffer layers. Based on optimized growth conditions, hole mobility as high as 1220 cm 2/Vs with carrier concentration of 1.3 × 10 12cm -2 was achieved. A 0.2-μm-gate-length In 0.4Ga 0.6Sb/AlSb p-channel device exhibited a maximum drain current of 102 mA/mm, a peak transconductance of 92 mS/mm, and an on-state breakdown voltage over 3 V. The pinchoff was observed for a gate bias of 0.6 V at drain current of 1 mA/mm. The current-gain and power-gain cutoff frequencies were 15 and 20 GHz, respectively.",

keywords = "Heterojunction field-effect transistors (HFETs), InGaSb/AlSb",

author = "Ho, {Han Chieh} and Gao, {Zon Yan} and Lin, {Heng Kuang} and Chiu, {Pei Chin} and Hsin, {Yue Ming} and Chyi, {Jen Inn}",

note = "Funding Information: Manuscript received March 12, 2012; revised March 21, 2012; accepted March 31, 2012. Date of publication May 14, 2012; date of current version June 22, 2012. This work was supported by the Taiwan National Science Council under Contract NSC 99-2221-E-008-107-MY3 and Contract NSC 100-2221-E-008-015-MY2, and supported in part by the Taiwan Semiconductor Manufacturing Company. The review of this letter was arranged by Editor T. Wang.",

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TY - JOUR

T1 - Device characteristics of InGaSb/AlSb high-hole-mobility FETs

AU - Ho, Han Chieh

AU - Gao, Zon Yan

AU - Lin, Heng Kuang

AU - Chiu, Pei Chin

AU - Hsin, Yue Ming

AU - Chyi, Jen Inn

N1 - Funding Information: Manuscript received March 12, 2012; revised March 21, 2012; accepted March 31, 2012. Date of publication May 14, 2012; date of current version June 22, 2012. This work was supported by the Taiwan National Science Council under Contract NSC 99-2221-E-008-107-MY3 and Contract NSC 100-2221-E-008-015-MY2, and supported in part by the Taiwan Semiconductor Manufacturing Company. The review of this letter was arranged by Editor T. Wang.

PY - 2012

Y1 - 2012

N2 - This letter reports the effect of growth temperature on carrier transport characteristics in In 0.4Ga 0.6Sb/AlSb heterostructure and demonstrates that hole mobility was enhanced by eliminating a parallel conducting channel in the buffer layers. Based on optimized growth conditions, hole mobility as high as 1220 cm 2/Vs with carrier concentration of 1.3 × 10 12cm -2 was achieved. A 0.2-μm-gate-length In 0.4Ga 0.6Sb/AlSb p-channel device exhibited a maximum drain current of 102 mA/mm, a peak transconductance of 92 mS/mm, and an on-state breakdown voltage over 3 V. The pinchoff was observed for a gate bias of 0.6 V at drain current of 1 mA/mm. The current-gain and power-gain cutoff frequencies were 15 and 20 GHz, respectively.

AB - This letter reports the effect of growth temperature on carrier transport characteristics in In 0.4Ga 0.6Sb/AlSb heterostructure and demonstrates that hole mobility was enhanced by eliminating a parallel conducting channel in the buffer layers. Based on optimized growth conditions, hole mobility as high as 1220 cm 2/Vs with carrier concentration of 1.3 × 10 12cm -2 was achieved. A 0.2-μm-gate-length In 0.4Ga 0.6Sb/AlSb p-channel device exhibited a maximum drain current of 102 mA/mm, a peak transconductance of 92 mS/mm, and an on-state breakdown voltage over 3 V. The pinchoff was observed for a gate bias of 0.6 V at drain current of 1 mA/mm. The current-gain and power-gain cutoff frequencies were 15 and 20 GHz, respectively.

KW - Heterojunction field-effect transistors (HFETs)

KW - InGaSb/AlSb

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U2 - 10.1109/LED.2012.2193656

DO - 10.1109/LED.2012.2193656

M3 - 期刊論文

AN - SCOPUS:84862870962

VL - 33

SP - 964

EP - 966

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

SN - 0741-3106

IS - 7

M1 - 6199953

ER -

Device characteristics of InGaSb/AlSb high-hole-mobility FETs

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