Device characteristics of InGaSb/AlSb high-hole-mobility FETs

Han Chieh Ho, Zon Yan Gao, Heng Kuang Lin, Pei Chin Chiu, Yue Ming Hsin, Jen Inn Chyi

Research output: Contribution to journalArticlepeer-review

12 Scopus citations


This letter reports the effect of growth temperature on carrier transport characteristics in In 0.4Ga 0.6Sb/AlSb heterostructure and demonstrates that hole mobility was enhanced by eliminating a parallel conducting channel in the buffer layers. Based on optimized growth conditions, hole mobility as high as 1220 cm 2/Vs with carrier concentration of 1.3 × 10 12cm -2 was achieved. A 0.2-μm-gate-length In 0.4Ga 0.6Sb/AlSb p-channel device exhibited a maximum drain current of 102 mA/mm, a peak transconductance of 92 mS/mm, and an on-state breakdown voltage over 3 V. The pinchoff was observed for a gate bias of 0.6 V at drain current of 1 mA/mm. The current-gain and power-gain cutoff frequencies were 15 and 20 GHz, respectively.

Original languageEnglish
Article number6199953
Pages (from-to)964-966
Number of pages3
JournalIEEE Electron Device Letters
Issue number7
StatePublished - 2012


  • Heterojunction field-effect transistors (HFETs)
  • InGaSb/AlSb


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