Device characteristics of AlGaN/GaN HEMTs with p-GaN cap layer

Chih Hao Li, Yan Cheng Jiang, Hsin Chang Tsai, Yi Nan Zhong, Yue ming Hsin

Research output: Contribution to journal › Editorial

7 Scopus citations

2 results

Finished
Algan/Gan Hemts with P-Gan Cap Passivation for Rf Power and Switching Circuits Applications(1/2)
Hsin, Y.
1/08/16 → 31/07/17
Project: Research
同具二維電子氣(2DEG)和二維電洞氣( 2DHG)之氮化鋁鎵/氮化鎵異質接面場效電晶體
Hsin, Y.
1/08/15 → 31/07/16
Project: Research