Device characteristics of AlGaN/GaN HEMTs with p-GaN cap layer

Chih Hao Li, Yan Cheng Jiang, Hsin Chang Tsai, Yi Nan Zhong, Yue ming Hsin

Research output: Contribution to journalEditorial

8 Scopus citations


In this study, AlGaN/GaN high-electron-mobility transistors with a 5-nm p-GaN cap layer were investigated to compare their performance under various activation conditions. Specifically, p-GaN cap layers were activated using rapid thermal annealing at 700C for 5, 10, and 15 min in an N2 environment before device fabrication. The gate leakage current reduced considerably when the p-GaN cap layer activation time was longer. The measured on/off current ratio was improved to 9 × 107 for a Schottky-gate device with 15-min annealing time. The breakdown voltage was increased using the activated p-GaN cap layer. In pulsed I-V measurements, the device with the p-GaN cap layer with a 15-min activation time exhibited less current dispersion.

Original languageEnglish
Pages (from-to)S3125-S3128
JournalECS Journal of Solid State Science and Technology
Issue number11
StatePublished - 2017


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