Abstract
This paper reviews the fabrication technology and performance characteristics of optically pumped and electrically pumped GaN-based vertical-cavity surface-emitting lasers (VCSELs). The lasing action of optically pumped hybrid GaN-based VCSELs has been observed at room temperature due to the employment of high-quality and high-reflectivity AlN/GaN-based distributed Bragg reflectors in the VCSEL structure. Based on the device structure of the optically pumped hybrid GaN-based VCSELs, we further achieved the lasing action of electrically pumped GaN-based VCSELs under continuous-wave operation at 77 K. The laser has a threshold injection current of 1.4 mA and emits a blue wavelength at 462 nm together with a narrow linewidth of about 0.15 nm. The laser beam has a divergence angle of about 11.7° with a polarization ratio of 80%. A very strong spontaneous coupling efficiency of 7.5 × 10 -2 was measured.
Original language | English |
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Article number | 4781784 |
Pages (from-to) | 850-860 |
Number of pages | 11 |
Journal | IEEE Journal on Selected Topics in Quantum Electronics |
Volume | 15 |
Issue number | 3 |
DOIs | |
State | Published - May 2009 |
Keywords
- Distributed Bragg reflector (DBR)
- Electrical pumping
- GaN
- Superlattice
- Vertical-cavity surface-emitting laser (VCSEL)