Development of a full-field polarization interferometer for measurement of wafer surface profile

This research presents a novel polarization interferometer using a polarization camera for accurate and reliable wafer surface profile measurement. The proposed technique employs Fizeau-type polarization interferometry to acquire polarization interference patterns, from which four phase-quadrature interference patterns are obtained. By applying a phase-shifting algorithm, the wafer surface profile can be determined. Experimental testing demonstrates the effectiveness of the proposed system, offering precise and accurate results. Compared to existing techniques, it offers advantages such as high measurement resolution, fast measurement speed, and full-field capability. These features make it a promising solution for improving quality control and manufacturing efficiency in the semiconductor industry, leading to enhanced product performance and increased competitiveness.