Design of Hybrid Schottky-Ohmic Gate in Normally-Off p-GaN Gate AlGaN/GaN HEMTs

Keyphrases

• GaN HEMT 100%
• Schottky 100%
• P-GaN 100%
• Ohmic 100%
• Normally-off 100%
• Left-handed 33%
• GaN Surface 33%
• On-state 33%
• Gate Structure 33%
• Schottky Gate 33%
• Right-sided 33%
• Side Structure 33%
• Contact Length 33%
• Schottky Gate Contact 33%
• P-GaN Gate 33%
• Order of Magnitude 16%
• Drain Current 16%
• Gate Metal 16%
• Gate Leakage 16%
• Optimal Performance 16%
• Gate Leakage Current 16%
• Design Change 16%
• Gate Geometry 16%
• Metal Design 16%

Engineering

• Contact Length 100%
• Side Structure 100%
• Current Drain 50%
• Metal Gate 50%
• Optimal Performance 50%
• Contact Area 50%
• Design Change 50%
• Left Side 50%

Material Science

• Surface (Surface Science) 100%
• Contact Area 50%