Abstract
A dual-band antenna-in-package for millimeter-wave (mmW) applications is presented in the paper. The proposed antenna, which consists of a radiating slot and an air-filled cavity, is fed by a microstrip loaded with two tuning open-circuited stubs through a coupling C-shape aperture to achieve dual-band characteristics. The air-filled cavity, which is formed by the space between CMOS chip and integrated passive device substrate after flip-chip assembly process, can reduce loss and improve antenna gain. Simulation and measurement regarding antenna reflection coefficient, radiation pattern, and peak gain are conducted for design validation. The measured results show that the antenna can operate in V-band and E-band, and the impedance bandwidths with the reflection coefficient less than -10 dB are 6.1% and 5.8%, respectively. The measured gains are -2 dBi at 58 GHz and 0.3 dBi at 77 GHz, respectively. The proposed antenna is well suited for dual-band mmW high-data-rate wireless communication systems.
| Original language | English |
|---|---|
| Article number | 6728718 |
| Pages (from-to) | 385-391 |
| Number of pages | 7 |
| Journal | IEEE Transactions on Components, Packaging and Manufacturing Technology |
| Volume | 4 |
| Issue number | 3 |
| DOIs | |
| State | Published - Mar 2014 |
Keywords
- CMOS process
- dual band
- flip-chip assembly
- integrated passive device (IPD) process
- millimeter wave (mmW)
- on-chip antenna