Design of a V-band 2 × 2 dual-polarization dielectric resonator antenna array

Ta Yeh Lin, Tsenchieh Chiu, Da Chiang Chang

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

A high gain V-band on-chip 2×2 dual-polarization dielectric resonator antenna (DRA) array in silicon substrate based on Integrated Passive Device (IPD) technology is presented in the paper. In the proposed structure, dielectric resonator (DR) was fed by using wire-bond structures for bandwidth and antenna efficiency improvement. The simulation and measurement regarding the DRA element reflection coefficient and isolation are conducted for design validation. The simulated results show that the antenna can operate in V-band, and the impedance bandwidth with |S11| less than -10 dB is from 55.7 GHz to 65.8 GHz. The peak gain is 10.3 dBi. The proposed design is well suited for System-in-Package millimeter-wave radio front-ends.

Original languageEnglish
Title of host publication2016 IEEE Electrical Design of Advanced Packaging and Systems Symposium, EDAPS 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages135-137
Number of pages3
ISBN (Electronic)9781509061846
DOIs
StatePublished - 5 Apr 2017
Event2016 IEEE Electrical Design of Advanced Packaging and Systems Symposium, EDAPS 2016 - Honolulu, United States
Duration: 14 Dec 201616 Dec 2016

Publication series

Name2016 IEEE Electrical Design of Advanced Packaging and Systems Symposium, EDAPS 2016

Conference

Conference2016 IEEE Electrical Design of Advanced Packaging and Systems Symposium, EDAPS 2016
Country/TerritoryUnited States
CityHonolulu
Period14/12/1616/12/16

Keywords

  • IPD technology
  • V-band
  • component
  • dielectric resonator antenna (DRA)
  • millimeter-wave (mmW)
  • on-chip antenna

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