@inproceedings{d9fd37369a5c4a3eaeecc701c2c7d0d1,
title = "Design of a DC-33 GHz cascode distributed amplifier using dual-gate device in 0.5-μm GaAs E/D-mode HEMT process",
abstract = "Design of a DC-33 GHz cascode distributed amplifier (DA) using dual-gate device in 0.5-μm GaAs enhancement/depletion-mode (E/D-mode) high electron mobility transistor (HEMT) process is presented in this paper. A compact dual-gate HEMT is adopted in the gain cell of the DA. By using the dual-gate HEMT, the gain-bandwidth product of the DA can be further improved. The proposed DA achieves a small-signal gain of 10.6 dB, an output power 1-dB compress point (OP1dB) of 8.9 dBm, and a 3-dB bandwidth from dc to 33 GHz. The DA is also successfully evaluated using pseudorandom bit stream (PRBS) signal with a data rate up to 12-Gbps. The proposed dual-gate DA is suitable for the high-speed data rate transmission due to its superior performance.",
keywords = "Distributed amplifier, MMIC, dual-gate device, enhancement/depletion-mode (E/D-mode)",
author = "Chen, {Si Hua} and Shen, {Chih Chun} and Weng, {Shou Hsien} and Liu, {Yu Cheng} and Chang, {Hong Yeh} and Wang, {Yu Chi}",
year = "2013",
doi = "10.1109/APMC.2013.6694911",
language = "???core.languages.en_GB???",
isbn = "9781479914746",
series = "Asia-Pacific Microwave Conference Proceedings, APMC",
pages = "728--730",
booktitle = "2013 Asia-Pacific Microwave Conference Proceedings, APMC 2013",
note = "2013 3rd Asia-Pacific Microwave Conference, APMC 2013 ; Conference date: 05-11-2013 Through 08-11-2013",
}