Design of a DC-33 GHz cascode distributed amplifier using dual-gate device in 0.5-μm GaAs E/D-mode HEMT process

Si Hua Chen, Chih Chun Shen, Shou Hsien Weng, Yu Cheng Liu, Hong Yeh Chang, Yu Chi Wang

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

6 Scopus citations

Abstract

Design of a DC-33 GHz cascode distributed amplifier (DA) using dual-gate device in 0.5-μm GaAs enhancement/depletion-mode (E/D-mode) high electron mobility transistor (HEMT) process is presented in this paper. A compact dual-gate HEMT is adopted in the gain cell of the DA. By using the dual-gate HEMT, the gain-bandwidth product of the DA can be further improved. The proposed DA achieves a small-signal gain of 10.6 dB, an output power 1-dB compress point (OP1dB) of 8.9 dBm, and a 3-dB bandwidth from dc to 33 GHz. The DA is also successfully evaluated using pseudorandom bit stream (PRBS) signal with a data rate up to 12-Gbps. The proposed dual-gate DA is suitable for the high-speed data rate transmission due to its superior performance.

Original languageEnglish
Title of host publication2013 Asia-Pacific Microwave Conference Proceedings, APMC 2013
Pages728-730
Number of pages3
DOIs
StatePublished - 2013
Event2013 3rd Asia-Pacific Microwave Conference, APMC 2013 - Seoul, Korea, Republic of
Duration: 5 Nov 20138 Nov 2013

Publication series

NameAsia-Pacific Microwave Conference Proceedings, APMC

Conference

Conference2013 3rd Asia-Pacific Microwave Conference, APMC 2013
Country/TerritoryKorea, Republic of
CitySeoul
Period5/11/138/11/13

Keywords

  • Distributed amplifier
  • dual-gate device
  • enhancement/depletion-mode (E/D-mode)
  • MMIC

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