Design of a broadband low imbalance active balun using darlington cell technique in 0.35-μm SiGe BiCMOS process

Shou Hsien Weng, Hong Yeh Chang, Kevin Chen, Szu Hsien Wu

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Scopus citations

Abstract

Design of a broadband low imbalance active balun in a 0.35-μm SiGe BiCMOS process for microwave applications is presented in this paper. The proposed active balun employs Darlington pairs in a differential pair to archive broad and flat bandwidth with good amplitude/phase matches. In addition, a current mirror with a small inductor is realized as an ideal current source to further reduce signal loss and amplitude/phase imbalances at high frequency. Between 0.2 and 14.6 GHz, the proposed active balun demonstrates a gain variation of within 3 dB, an amplitude imbalance of within 1 dB, and a phase error of within 10°. Moreover, this circuit can be further applied to broadband microwave circuits, such as frequency divider and balanced mixer, due to its broad and flat bandwidth with good amplitude/phase matches and compact area.

Original languageEnglish
Title of host publicationAPMC 2009 - Asia Pacific Microwave Conference 2009
Pages385-388
Number of pages4
DOIs
StatePublished - 2009
EventAsia Pacific Microwave Conference 2009, APMC 2009 - Singapore, Singapore
Duration: 7 Dec 200910 Dec 2009

Publication series

NameAPMC 2009 - Asia Pacific Microwave Conference 2009

Conference

ConferenceAsia Pacific Microwave Conference 2009, APMC 2009
Country/TerritorySingapore
CitySingapore
Period7/12/0910/12/09

Keywords

  • Active balun
  • Bicmos
  • Broadband
  • Darlington pair
  • Microwave

Fingerprint

Dive into the research topics of 'Design of a broadband low imbalance active balun using darlington cell technique in 0.35-μm SiGe BiCMOS process'. Together they form a unique fingerprint.

Cite this