Design and analysis of ultra-high-speed near-ballistic uni-traveling- carrier photodiodes under a 50-Ω load for high-power performance

Jin Wei Shi, Feng Ming Kuo, John E. Bowers

Research output: Contribution to journalArticlepeer-review

57 Scopus citations

Abstract

We demonstrate a near-ballistic uni-traveling-carrier photodiode (NBUTC-PD) with a scaled-down epi-layer structure designed for high-power performance in the sub-THz frequency regime. Compared with UTC-PDs, NBUTC-PDs offer a higher optimum bias voltage for the near-ballistic transport of electrons, which leads to improvement in the output power performance. Furthermore, a small load resistance (< 50Ω), which would sacrifice the output power for minimizing the output ac voltage swing on dc bias point, is not necessary. By scaling down the collector layer thickness and active area of the NBUTC-PDs, we achieve a large optical-to-electrical bandwidth (250 GHz) and a high saturation current (17 mA), which is close to the theoretical maximum, under a 50-Ω load and -2-V bias.

Original languageEnglish
Article number6104356
Pages (from-to)533-535
Number of pages3
JournalIEEE Photonics Technology Letters
Volume24
Issue number7
DOIs
StatePublished - 2012

Keywords

  • High-power photodiode
  • photodiodes
  • photonic transmitter

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