Design and analysis of a DC-43.5-GHz fully integrated distributed amplifier using GaAs HEMT-HBT cascode gain stage

Hong Yeh Chang; Yu Cheng Liu; Shou Hsien Weng; Chi Hsien Lin; Yeh Liang Yeh; Yu Chi Wang

doi:10.1109/TMTT.2010.2092786

Design and analysis of a DC-43.5-GHz fully integrated distributed amplifier using GaAs HEMT-HBT cascode gain stage

Hong Yeh Chang, Yu Cheng Liu, Shou Hsien Weng, Chi Hsien Lin, Yeh Liang Yeh, Yu Chi Wang

Department of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

54 Scopus citations

Abstract

Design and analysis of a dc-43.5-GHz fully integrated distributed amplifier (DA) using a GaAs high electron-mobility transistor (HEMT) heterojunction bipolar transistor (HBT) cascode gain stage is presented in this paper. The proposed DA is fabricated in a stacked 2-μm InGaP/GaAs HBT, 0.5-μm AlGaAs/GaAs enhancement- and depletion-mode HEMT monolithic microwave integrated circuit technology. A modified m-derived network and an HEMTHBT cascode amplifier with inductive peaking technique are investigated to enhance the bandwidth of the DA. The bias networks of the DA are fully integrated in a single chip without off-chip bias-T or bias components. The measured average small-signal gain is 8.5 dB. The measured minimum noise figure is 4.2 dB. The measured maximum output 1-dB compression point (P_{1 dB}) and the maximum output third-order intercept point are 8 and 18 dBm, respectively. Moreover, the DA is successfully evaluated with an eye diagram measurement, and demonstrates good transmission quality.

Original language	English
Article number	5671514
Pages (from-to)	443-455
Number of pages	13
Journal	IEEE Transactions on Microwave Theory and Techniques
Volume	59
Issue number	2
DOIs	https://doi.org/10.1109/TMTT.2010.2092786
State	Published - Feb 2011

Keywords

Distributed amplifier (DA)
enhancement- and depletion-mode (E/D-mode) high electron-mobility transistor (HEMT)
heterojunction bipolar transistor (HBT)
microwave
monolithic microwave integrated circuit (MMIC)

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10.1109/TMTT.2010.2092786

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title = "Design and analysis of a DC-43.5-GHz fully integrated distributed amplifier using GaAs HEMT-HBT cascode gain stage",

abstract = "Design and analysis of a dc-43.5-GHz fully integrated distributed amplifier (DA) using a GaAs high electron-mobility transistor (HEMT) heterojunction bipolar transistor (HBT) cascode gain stage is presented in this paper. The proposed DA is fabricated in a stacked 2-μm InGaP/GaAs HBT, 0.5-μm AlGaAs/GaAs enhancement- and depletion-mode HEMT monolithic microwave integrated circuit technology. A modified m-derived network and an HEMTHBT cascode amplifier with inductive peaking technique are investigated to enhance the bandwidth of the DA. The bias networks of the DA are fully integrated in a single chip without off-chip bias-T or bias components. The measured average small-signal gain is 8.5 dB. The measured minimum noise figure is 4.2 dB. The measured maximum output 1-dB compression point (P1 dB) and the maximum output third-order intercept point are 8 and 18 dBm, respectively. Moreover, the DA is successfully evaluated with an eye diagram measurement, and demonstrates good transmission quality.",

keywords = "Distributed amplifier (DA), enhancement- and depletion-mode (E/D-mode) high electron-mobility transistor (HEMT), heterojunction bipolar transistor (HBT), microwave, monolithic microwave integrated circuit (MMIC)",

author = "Chang, {Hong Yeh} and Liu, {Yu Cheng} and Weng, {Shou Hsien} and Lin, {Chi Hsien} and Yeh, {Yeh Liang} and Wang, {Yu Chi}",

note = "Funding Information: Manuscript received July 02, 2010; revised October 10, 2010; accepted October 29, 2010. Date of publication December 17, 2010; date of current version February 16, 2011. This work was supported in part by the National Science Council (NSC) of Taiwan under Grant NSC 96-2221-E-008-117-MY3 and Grant NSC 99-2221-E-008-097-MY3, under the ALMA-T Research Project, by the WIN Semiconductors Corporation, and by the Chip Implementation Center (CIC), Taiwan.",

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AU - Chang, Hong Yeh

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AU - Weng, Shou Hsien

AU - Lin, Chi Hsien

AU - Yeh, Yeh Liang

AU - Wang, Yu Chi

N1 - Funding Information: Manuscript received July 02, 2010; revised October 10, 2010; accepted October 29, 2010. Date of publication December 17, 2010; date of current version February 16, 2011. This work was supported in part by the National Science Council (NSC) of Taiwan under Grant NSC 96-2221-E-008-117-MY3 and Grant NSC 99-2221-E-008-097-MY3, under the ALMA-T Research Project, by the WIN Semiconductors Corporation, and by the Chip Implementation Center (CIC), Taiwan.

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N2 - Design and analysis of a dc-43.5-GHz fully integrated distributed amplifier (DA) using a GaAs high electron-mobility transistor (HEMT) heterojunction bipolar transistor (HBT) cascode gain stage is presented in this paper. The proposed DA is fabricated in a stacked 2-μm InGaP/GaAs HBT, 0.5-μm AlGaAs/GaAs enhancement- and depletion-mode HEMT monolithic microwave integrated circuit technology. A modified m-derived network and an HEMTHBT cascode amplifier with inductive peaking technique are investigated to enhance the bandwidth of the DA. The bias networks of the DA are fully integrated in a single chip without off-chip bias-T or bias components. The measured average small-signal gain is 8.5 dB. The measured minimum noise figure is 4.2 dB. The measured maximum output 1-dB compression point (P1 dB) and the maximum output third-order intercept point are 8 and 18 dBm, respectively. Moreover, the DA is successfully evaluated with an eye diagram measurement, and demonstrates good transmission quality.

AB - Design and analysis of a dc-43.5-GHz fully integrated distributed amplifier (DA) using a GaAs high electron-mobility transistor (HEMT) heterojunction bipolar transistor (HBT) cascode gain stage is presented in this paper. The proposed DA is fabricated in a stacked 2-μm InGaP/GaAs HBT, 0.5-μm AlGaAs/GaAs enhancement- and depletion-mode HEMT monolithic microwave integrated circuit technology. A modified m-derived network and an HEMTHBT cascode amplifier with inductive peaking technique are investigated to enhance the bandwidth of the DA. The bias networks of the DA are fully integrated in a single chip without off-chip bias-T or bias components. The measured average small-signal gain is 8.5 dB. The measured minimum noise figure is 4.2 dB. The measured maximum output 1-dB compression point (P1 dB) and the maximum output third-order intercept point are 8 and 18 dBm, respectively. Moreover, the DA is successfully evaluated with an eye diagram measurement, and demonstrates good transmission quality.

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KW - enhancement- and depletion-mode (E/D-mode) high electron-mobility transistor (HEMT)

KW - heterojunction bipolar transistor (HBT)

KW - microwave

KW - monolithic microwave integrated circuit (MMIC)

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JO - IEEE Transactions on Microwave Theory and Techniques

JF - IEEE Transactions on Microwave Theory and Techniques

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M1 - 5671514

ER -

Design and analysis of a DC-43.5-GHz fully integrated distributed amplifier using GaAs HEMT-HBT cascode gain stage

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Keywords

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