Design and analysis of a DC-43.5-GHz fully integrated distributed amplifier using GaAs HEMT-HBT cascode gain stage

Hong Yeh Chang, Yu Cheng Liu, Shou Hsien Weng, Chi Hsien Lin, Yeh Liang Yeh, Yu Chi Wang

Research output: Contribution to journalArticlepeer-review

47 Scopus citations

Abstract

Design and analysis of a dc-43.5-GHz fully integrated distributed amplifier (DA) using a GaAs high electron-mobility transistor (HEMT) heterojunction bipolar transistor (HBT) cascode gain stage is presented in this paper. The proposed DA is fabricated in a stacked 2-μm InGaP/GaAs HBT, 0.5-μm AlGaAs/GaAs enhancement- and depletion-mode HEMT monolithic microwave integrated circuit technology. A modified m-derived network and an HEMTHBT cascode amplifier with inductive peaking technique are investigated to enhance the bandwidth of the DA. The bias networks of the DA are fully integrated in a single chip without off-chip bias-T or bias components. The measured average small-signal gain is 8.5 dB. The measured minimum noise figure is 4.2 dB. The measured maximum output 1-dB compression point (P1 dB) and the maximum output third-order intercept point are 8 and 18 dBm, respectively. Moreover, the DA is successfully evaluated with an eye diagram measurement, and demonstrates good transmission quality.

Original languageEnglish
Article number5671514
Pages (from-to)443-455
Number of pages13
JournalIEEE Transactions on Microwave Theory and Techniques
Volume59
Issue number2
DOIs
StatePublished - Feb 2011

Keywords

  • Distributed amplifier (DA)
  • enhancement- and depletion-mode (E/D-mode) high electron-mobility transistor (HEMT)
  • heterojunction bipolar transistor (HBT)
  • microwave
  • monolithic microwave integrated circuit (MMIC)

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