Deposition of high-quality Ge film on Si by PECVD using GeCl₄/H₂ for fabricating near-infrared photodiodes

Keyphrases

• Atomic Layer Deposition 33%
• Buffer Layer 33%
• Dark Current Density 33%
• Direct Deposition 33%
• Electronic Circuit 33%
• Fabrication Methods 33%
• Ge Film 100%
• Impurity-free 33%
• Low Dark Current 33%
• Low-temperature Fabrication 33%
• Monocrystalline 33%
• Monolithic Integration 33%
• Near-infrared Photodiodes 100%
• Optoelectronic Components 33%
• Photodiode 33%
• Plasma-enhanced Chemical Vapor Deposition (PECVD) 100%
• Post-annealing 33%
• Responsivity 33%
• Si Photodiode 33%
• Si Substrate 33%
• Si-based 33%
• SiGe 33%
• Substrate Temperature 33%
• Surface Roughness 33%
• Tensile Strained 33%
• Threading Dislocation Density 33%

Material Science

• Annealing 33%
• Buffer Layer 33%
• Density 66%
• Electronic Circuit 33%
• Film 100%
• Nucleation 33%
• Plasma-Enhanced Chemical Vapor Deposition 100%
• Surface Roughness 33%