Keyphrases
Atomic Layer Deposition
33%
Buffer Layer
33%
Dark Current Density
33%
Direct Deposition
33%
Electronic Circuit
33%
Fabrication Methods
33%
Ge Film
100%
Impurity-free
33%
Low Dark Current
33%
Low-temperature Fabrication
33%
Monocrystalline
33%
Monolithic Integration
33%
Near-infrared Photodiodes
100%
Optoelectronic Components
33%
Photodiode
33%
Plasma-enhanced Chemical Vapor Deposition (PECVD)
100%
Post-annealing
33%
Responsivity
33%
Si Photodiode
33%
Si Substrate
33%
Si-based
33%
SiGe
33%
Substrate Temperature
33%
Surface Roughness
33%
Tensile Strain
33%
Threading Dislocation Density
33%
Engineering
Atomic Layer Deposition
25%
Buffer Layer
25%
Chemical Vapor Deposition
100%
Dislocation Density
25%
Fabrication Method
25%
Low-Temperature
25%
Monocrystalline
25%
Monolithic Integration
25%
Networks (Circuits)
25%
Optoelectronics
25%
Photodiode
100%
Responsivity
25%
Si Substrate
25%
Substrate Temperature
25%
Tensiles
25%
Threading Dislocation
25%
Vapor Deposition
100%
Material Science
Annealing
33%
Buffer Layer
33%
Density
66%
Electronic Circuit
33%
Film
100%
Nucleation
33%
Plasma-Enhanced Chemical Vapor Deposition
100%
Surface Roughness
33%
Chemical Engineering
Atomic Layer Deposition
33%
Film
100%
Plasma Enhanced Chemical Vapor Deposition
100%