Dependence of composition fluctuation on indium content in InGaN/GaN multiple quantum wells

Yen Sheng Lin, Kung Jeng Ma, C. Hsu, Shih Wei Feng, Yung Chen Cheng, Chi Chih Liao, C. C. Yang, Chang Cheng Chou, Chia Ming Lee, Jen Inn Chyi

Research output: Contribution to journalArticlepeer-review

232 Scopus citations

Abstract

The information on the variations of indium composition, aggregation size, and quantum-well width is crucially important for understanding the optical properties and, hence, fabricating efficient light-emitting devices. Our results showed that spinodal decomposition could occur in InGaN/GaN multiple quantum wells with indium content in the range of 15%-25% (grown with metal-organic chemical-vapor deposition). A lower nominal indium content led to a better confinement of indium-rich clusters within InGaN quantum wells. The InGaN/GaN interfaces became more diffusive, and indium-rich aggregates extended into GaN barriers with increasing indium content. It was also observed that indium-rich precipitates with diameter ranging from 5 to 12 nm preferred aggregating near V-shaped defects.

Original languageEnglish
Pages (from-to)2988-2990
Number of pages3
JournalApplied Physics Letters
Volume77
Issue number19
DOIs
StatePublished - 6 Nov 2000

Fingerprint

Dive into the research topics of 'Dependence of composition fluctuation on indium content in InGaN/GaN multiple quantum wells'. Together they form a unique fingerprint.

Cite this