Defects in metamorphic InxAl1-xAs (x<0.4) epilayers grown on GaAs substrates

Jia Lin Shieh, Mao Nan Chang, Yung Shih Cheng, Jen Inn Chyi

Research output: Contribution to journalArticlepeer-review

8 Scopus citations


Defects in Si-doped InxAl1-xAs (0<x<0.4) epilayers on GaAs substrates were systematically investigated by deep-level transient spectroscopy. Three electron traps, ranging from 0.22 to 0.89 eV, were observed in InxAll-xAs grown by molecular beam epitaxy. Their energy levels can be extrapolated from those in the InxAll-xAs/InP system. A low-temperature-grown buffer layer as well as thermal annealing were found to be capable of reducing the defects in the active layer effectively.

Original languageEnglish
Pages (from-to)210-213
Number of pages4
JournalJournal of Applied Physics
Issue number1
StatePublished - 1 Jul 1997


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