Defects in metamorphic InxAl1-xAs (x<0.4) epilayers grown on GaAs substrates

Jia Lin Shieh; Mao Nan Chang; Yung Shih Cheng; Jen Inn Chyi

doi:10.1063/1.365799

Defects in metamorphic In_xAl_1-xAs (x<0.4) epilayers grown on GaAs substrates

Jia Lin Shieh, Mao Nan Chang, Yung Shih Cheng, Jen Inn Chyi

Department of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

Defects in Si-doped In_xAl_1-xAs (0<x<0.4) epilayers on GaAs substrates were systematically investigated by deep-level transient spectroscopy. Three electron traps, ranging from 0.22 to 0.89 eV, were observed in In_xAl_l-xAs grown by molecular beam epitaxy. Their energy levels can be extrapolated from those in the In_xAl_l-xAs/InP system. A low-temperature-grown buffer layer as well as thermal annealing were found to be capable of reducing the defects in the active layer effectively.

Original language	English
Pages (from-to)	210-213
Number of pages	4
Journal	Journal of Applied Physics
Volume	82
Issue number	1
DOIs	https://doi.org/10.1063/1.365799
State	Published - 1 Jul 1997

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abstract = "Defects in Si-doped InxAl1-xAs (0xAll-xAs grown by molecular beam epitaxy. Their energy levels can be extrapolated from those in the InxAll-xAs/InP system. A low-temperature-grown buffer layer as well as thermal annealing were found to be capable of reducing the defects in the active layer effectively.",

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AU - Cheng, Yung Shih

AU - Chyi, Jen Inn

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N2 - Defects in Si-doped InxAl1-xAs (0xAll-xAs grown by molecular beam epitaxy. Their energy levels can be extrapolated from those in the InxAll-xAs/InP system. A low-temperature-grown buffer layer as well as thermal annealing were found to be capable of reducing the defects in the active layer effectively.

AB - Defects in Si-doped InxAl1-xAs (0xAll-xAs grown by molecular beam epitaxy. Their energy levels can be extrapolated from those in the InxAll-xAs/InP system. A low-temperature-grown buffer layer as well as thermal annealing were found to be capable of reducing the defects in the active layer effectively.

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Defects in metamorphic InxAl1-xAs (x<0.4) epilayers grown on GaAs substrates

Abstract

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Defects in metamorphic In_xAl_1-xAs (x<0.4) epilayers grown on GaAs substrates