DC characteristics of GaAsSb/InGaAs type-II heterojunction bipolar transistor

Sheng Yu Wang; Shu Han Chen; Kuo Hung Teng; Jen Inn Chyi

doi:10.1109/ICIPRM.2007.381144

DC characteristics of GaAsSb/InGaAs type-II heterojunction bipolar transistor

Sheng Yu Wang, Shu Han Chen, Kuo Hung Teng, Jen Inn Chyi

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Original language	English
Title of host publication	IPRM'07
Subtitle of host publication	IEEE 19th International Conference on Indium Phosphide and Related Materials - Conference Proceedings
Pages	145-146
Number of pages	2
DOIs	https://doi.org/10.1109/ICIPRM.2007.381144
State	Published - 2007
Event	IPRM'07: IEEE 19th International Conference on Indium Phosphide and Related Materials - Matsue, Japan Duration: 14 May 2007 → 18 May 2007

Publication series

Name	Conference Proceedings - International Conference on Indium Phosphide and Related Materials
ISSN (Print)	1092-8669

Conference

Conference	IPRM'07: IEEE 19th International Conference on Indium Phosphide and Related Materials
Country/Territory	Japan
City	Matsue
Period	14/05/07 → 18/05/07

Access to Document

10.1109/ICIPRM.2007.381144

Cite this

Wang, S. Y., Chen, S. H., Teng, K. H., & Chyi, J. I. (2007). DC characteristics of GaAsSb/InGaAs type-II heterojunction bipolar transistor. In IPRM'07: IEEE 19th International Conference on Indium Phosphide and Related Materials - Conference Proceedings (pp. 145-146). Article 4265901 (Conference Proceedings - International Conference on Indium Phosphide and Related Materials). https://doi.org/10.1109/ICIPRM.2007.381144

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title = "DC characteristics of GaAsSb/InGaAs type-II heterojunction bipolar transistor",

author = "Wang, {Sheng Yu} and Chen, {Shu Han} and Teng, {Kuo Hung} and Chyi, {Jen Inn}",

year = "2007",

doi = "10.1109/ICIPRM.2007.381144",

language = "???core.languages.en_GB???",

isbn = "142440875X",

series = "Conference Proceedings - International Conference on Indium Phosphide and Related Materials",

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Wang, SY, Chen, SH, Teng, KH & Chyi, JI 2007, DC characteristics of GaAsSb/InGaAs type-II heterojunction bipolar transistor. in IPRM'07: IEEE 19th International Conference on Indium Phosphide and Related Materials - Conference Proceedings., 4265901, Conference Proceedings - International Conference on Indium Phosphide and Related Materials, pp. 145-146, IPRM'07: IEEE 19th International Conference on Indium Phosphide and Related Materials, Matsue, Japan, 14/05/07. https://doi.org/10.1109/ICIPRM.2007.381144

DC characteristics of GaAsSb/InGaAs type-II heterojunction bipolar transistor. / Wang, Sheng Yu; Chen, Shu Han; Teng, Kuo Hung et al.
IPRM'07: IEEE 19th International Conference on Indium Phosphide and Related Materials - Conference Proceedings. 2007. p. 145-146 4265901 (Conference Proceedings - International Conference on Indium Phosphide and Related Materials).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - DC characteristics of GaAsSb/InGaAs type-II heterojunction bipolar transistor

AU - Wang, Sheng Yu

AU - Chen, Shu Han

AU - Teng, Kuo Hung

AU - Chyi, Jen Inn

PY - 2007

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U2 - 10.1109/ICIPRM.2007.381144

DO - 10.1109/ICIPRM.2007.381144

M3 - 會議論文篇章

AN - SCOPUS:34748830377

SN - 142440875X

SN - 9781424408757

T3 - Conference Proceedings - International Conference on Indium Phosphide and Related Materials

SP - 145

EP - 146

BT - IPRM'07

T2 - IPRM'07: IEEE 19th International Conference on Indium Phosphide and Related Materials

Y2 - 14 May 2007 through 18 May 2007

ER -

Wang SY, Chen SH, Teng KH, Chyi JI. DC characteristics of GaAsSb/InGaAs type-II heterojunction bipolar transistor. In IPRM'07: IEEE 19th International Conference on Indium Phosphide and Related Materials - Conference Proceedings. 2007. p. 145-146. 4265901. (Conference Proceedings - International Conference on Indium Phosphide and Related Materials). doi: 10.1109/ICIPRM.2007.381144