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DC characteristics of AZO/GaN heterojunction bipolar transistors
C. T. Pan
, R. J. Hou
,
Y. M. Hsin
, H. C. Chiu
Department of Electrical Engineering
Research output
:
Contribution to journal
›
Article
›
peer-review
2
Scopus citations
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Keyphrases
(NH4)2S
33%
Al-doped Zinc Oxide
100%
Common-emitter
33%
Current Gain
33%
DC Characteristics
100%
DC Current Gain
33%
Device Characteristics
33%
Heterojunction Bipolar Transistors
100%
High Current Gain
33%
Improved Device
33%
Leakage Current
33%
Low Current
33%
Output Characteristics
33%
Earth and Planetary Sciences
Bipolar Transistor
100%
Direct Current
33%
Emitter
66%
Heterojunctions
100%
High Current
33%
Low Current
33%
Engineering
Bipolar Transistor
100%
Current Gain
100%
Direct Current
33%
Heterojunctions
100%
Physics
Bipolar Transistor
100%
Heterojunctions
100%
Zinc Oxide
100%
Material Science
Bipolar Transistor
100%
Heterojunction
100%
Zinc Oxide
100%
Chemical Engineering
Zinc Oxide
100%