DC characteristics of AZO/GaN heterojunction bipolar transistors

C. T. Pan, R. J. Hou, Y. M. Hsin, H. C. Chiu

Research output: Contribution to journalArticlepeer-review

2 Scopus citations


A new npn Al-doped zinc oxide (AZO)/GaN heterojunction bipolar transistor (HBT) is presented. The fabricated HBT with an emitter size of 120×120m2 exhibits a current gain of 5.8 at V BE=3.0V. The anomalous high current gain is observed at low current level due to the leakage current. The common-emitter output characteristics demonstrate DC current gain of 1.2. In addition, improved device characteristics are observed after the P2S5/(NH4)2S treatment.

Original languageEnglish
Pages (from-to)230-231
Number of pages2
JournalElectronics Letters
Issue number4
StatePublished - 2009


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