Abstract
A new npn Al-doped zinc oxide (AZO)/GaN heterojunction bipolar transistor (HBT) is presented. The fabricated HBT with an emitter size of 120×120m2 exhibits a current gain of 5.8 at V BE=3.0V. The anomalous high current gain is observed at low current level due to the leakage current. The common-emitter output characteristics demonstrate DC current gain of 1.2. In addition, improved device characteristics are observed after the P2S5/(NH4)2S treatment.
Original language | English |
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Pages (from-to) | 230-231 |
Number of pages | 2 |
Journal | Electronics Letters |
Volume | 45 |
Issue number | 4 |
DOIs | |
State | Published - 2009 |