DC Characteristics and Low-Frquency Noise of AlGaN/GaN HEMTs with Different Gate-to-Source Lengths

Shih Sheng Yang, Yue Ming Hsin

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

In this paper, DC and low-frequency noise characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) with different gate-to-source lengths (LGS) are presented. Due to the different (LGS), the device with shortest shows highest transconductance (gm) and drain current. But the threshold voltages (VTH) are the same for all devices. In low-frequency noise measurement, not only flicker noise (1/f noise) exists also accompany by generation-recombination noise (G-R) noise). Noise power spectral densities (PSD) are similar in devices with different LGS, and 1/f noise shows carrier number fluctuation (CNF) is the dominant cause. In addition, this paper discussed the G-R noise and extracted the traps in GaN buffer layer with activation energy of ∼ 0.35eV.

Original languageEnglish
Title of host publication2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781665433914
DOIs
StatePublished - 25 Aug 2021
Event2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021 - Hualien, Taiwan
Duration: 25 Aug 202127 Aug 2021

Publication series

Name2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021

Conference

Conference2021 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2021
Country/TerritoryTaiwan
CityHualien
Period25/08/2127/08/21

Keywords

  • AlGaN/GaN HEMTs
  • carrier number fluctuation
  • flicker noise
  • generation-recombination noise

Fingerprint

Dive into the research topics of 'DC Characteristics and Low-Frquency Noise of AlGaN/GaN HEMTs with Different Gate-to-Source Lengths'. Together they form a unique fingerprint.

Cite this