DC and RF characteristics of InAs-channel MOS-MODFETs using PECVD SiO 2 as gate dielectrics

Han Chieh Ho, Ta Wei Fan, Geng Ying Liau, Heng Kuang Lin, Pei Chin Chiu, Jen Inn Chyi, Chih Hsin Ko, Ta Ming Kuan, Meng Kuei Hsieh, Wen Chin Lee, Clement H. Wann

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

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Engineering & Materials Science

Chemical Compounds