DC and RF characteristics of InAs-channel MOS-MODFETs using PECVD SiO 2 as gate dielectrics

Han Chieh Ho, Ta Wei Fan, Geng Ying Liau, Heng Kuang Lin, Pei Chin Chiu, Jen Inn Chyi, Chih Hsin Ko, Ta Ming Kuan, Meng Kuei Hsieh, Wen Chin Lee, Clement H. Wann

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Small-bandgap InAs channel materials are potential candidates for high-speed and low-power applications and have been demonstrated in AlSb/InAs/AlSb QWFETs. Taking advantage of their excellent transport properties, we successfully develop an InAs-channel metal-oxide-semiconductor modulation-doped field-effect transistor (MOS-MODFET) using 100-nm PECVD-deposited SiO2 dielectrics for gate dielectrics. A 2μm-gate-length depletion-mode InAs n-channel MOS-MODFET shows a maximum drain current of 270 mA/mm, a peak transconductance of 189 mS/mm, and a low output conductance of 18 mS/mm in dc characteristics, and a maximum current-gain cut-off frequency of 14.5 GHz and a maximum oscillation frequency of 24.0 GHz in rf performances. The InAs-channel MOS-MODFET presents potentials for further developing complementary circuit devices.

Original languageEnglish
Title of host publication2010 International Conference on Indium Phosphide and Related Materials, 22nd IPRM - Conference Proceedings
Pages508-511
Number of pages4
DOIs
StatePublished - 2010
Event22nd International Conference on Indium Phosphide and Related Materials, IPRM 2010 - Kagawa, Japan
Duration: 31 May 20104 Jun 2010

Publication series

NameConference Proceedings - International Conference on Indium Phosphide and Related Materials
ISSN (Print)1092-8669

Conference

Conference22nd International Conference on Indium Phosphide and Related Materials, IPRM 2010
Country/TerritoryJapan
CityKagawa
Period31/05/104/06/10

Keywords

  • InAs
  • Metal-oxide-semiconductor modulation-doped field-effect transistor (MOS-MODFET)

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