D.c. and microwave characteristics of In0.32Al0.68As/In0.33Ga0.67As heterojunction bipolar transistors grown on GaAs

Hann Ping Hwang, Jia Lin Shieh, Jen Inn Chyi

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7 Scopus citations

Abstract

The d.c. and microwave characteristics of graded and abrupt junction In0.32Al0.68As/In0.33Ga0.67As heterojunction bipolar transistors (HBTs) grown on GaAs were investigated. A step-graded InxGa1-xAs buffer was employed to effectively suppress the threading dislocations resulting from the lattice mismatch between In0.33Ga0.67As and GaAs. These devices exhibited a small turn-on voltage of collector current and a high collector-emitter breakdown voltage (BVCEO>9.5 V) for a 0.35 μm-thick collector, demonstrating excellent quality of the base-emitter and base-collector junctions. Less size-dependence on current gain was observed for these metamorphic HBTs even without the emitter ledge. The peak common-emitter current gain at a collector current density of 40 kA/cm2 is 53 for the graded junction device with an emitter size of 2 × 4 μm2 and a base doping of 2 × 1019 cm-3. An Fmax of 56 GHz was measured for this device.

Original languageEnglish
Pages (from-to)463-468
Number of pages6
JournalSolid-State Electronics
Volume43
Issue number3
DOIs
StatePublished - 1999

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