D.c. and microwave characteristics of In0.32Al0.68As/In0.33Ga0.67As heterojunction bipolar transistors grown on GaAs

Hann Ping Hwang; Jia Lin Shieh; Jen Inn Chyi

doi:10.1016/S0038-1101(98)00310-4

D.c. and microwave characteristics of In_0.32Al_0.68As/In_0.33Ga_0.67As heterojunction bipolar transistors grown on GaAs

Hann Ping Hwang, Jia Lin Shieh, Jen Inn Chyi

Department of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

The d.c. and microwave characteristics of graded and abrupt junction In_0.32Al_0.68As/In_0.33Ga_0.67As heterojunction bipolar transistors (HBTs) grown on GaAs were investigated. A step-graded In_xGa_1-xAs buffer was employed to effectively suppress the threading dislocations resulting from the lattice mismatch between In_0.33Ga_0.67As and GaAs. These devices exhibited a small turn-on voltage of collector current and a high collector-emitter breakdown voltage (BV_CEO>9.5 V) for a 0.35 μm-thick collector, demonstrating excellent quality of the base-emitter and base-collector junctions. Less size-dependence on current gain was observed for these metamorphic HBTs even without the emitter ledge. The peak common-emitter current gain at a collector current density of 40 kA/cm² is 53 for the graded junction device with an emitter size of 2 × 4 μm² and a base doping of 2 × 10¹⁹ cm^-3. An Fmax of 56 GHz was measured for this device.

Original language	English
Pages (from-to)	463-468
Number of pages	6
Journal	Solid-State Electronics
Volume	43
Issue number	3
DOIs	https://doi.org/10.1016/S0038-1101(98)00310-4
State	Published - 1999

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@article{3b7939f030a9470c8a5979828382a7df,

title = "D.c. and microwave characteristics of In0.32Al0.68As/In0.33Ga0.67As heterojunction bipolar transistors grown on GaAs",

abstract = "The d.c. and microwave characteristics of graded and abrupt junction In0.32Al0.68As/In0.33Ga0.67As heterojunction bipolar transistors (HBTs) grown on GaAs were investigated. A step-graded InxGa1-xAs buffer was employed to effectively suppress the threading dislocations resulting from the lattice mismatch between In0.33Ga0.67As and GaAs. These devices exhibited a small turn-on voltage of collector current and a high collector-emitter breakdown voltage (BVCEO>9.5 V) for a 0.35 μm-thick collector, demonstrating excellent quality of the base-emitter and base-collector junctions. Less size-dependence on current gain was observed for these metamorphic HBTs even without the emitter ledge. The peak common-emitter current gain at a collector current density of 40 kA/cm2 is 53 for the graded junction device with an emitter size of 2 × 4 μm2 and a base doping of 2 × 1019 cm-3. An Fmax of 56 GHz was measured for this device.",

author = "Hwang, {Hann Ping} and Shieh, {Jia Lin} and Chyi, {Jen Inn}",

note = "Funding Information: The authors wish to thank the technical support from the MBE Laboratory of the Center for Optical Science, NCU. This work was partly supported by the National Science Council, Republic of China under contract NSC 85-2221-E008-018.",

year = "1999",

doi = "10.1016/S0038-1101(98)00310-4",

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volume = "43",

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TY - JOUR

T1 - D.c. and microwave characteristics of In0.32Al0.68As/In0.33Ga0.67As heterojunction bipolar transistors grown on GaAs

AU - Hwang, Hann Ping

AU - Shieh, Jia Lin

AU - Chyi, Jen Inn

N1 - Funding Information: The authors wish to thank the technical support from the MBE Laboratory of the Center for Optical Science, NCU. This work was partly supported by the National Science Council, Republic of China under contract NSC 85-2221-E008-018.

PY - 1999

Y1 - 1999

N2 - The d.c. and microwave characteristics of graded and abrupt junction In0.32Al0.68As/In0.33Ga0.67As heterojunction bipolar transistors (HBTs) grown on GaAs were investigated. A step-graded InxGa1-xAs buffer was employed to effectively suppress the threading dislocations resulting from the lattice mismatch between In0.33Ga0.67As and GaAs. These devices exhibited a small turn-on voltage of collector current and a high collector-emitter breakdown voltage (BVCEO>9.5 V) for a 0.35 μm-thick collector, demonstrating excellent quality of the base-emitter and base-collector junctions. Less size-dependence on current gain was observed for these metamorphic HBTs even without the emitter ledge. The peak common-emitter current gain at a collector current density of 40 kA/cm2 is 53 for the graded junction device with an emitter size of 2 × 4 μm2 and a base doping of 2 × 1019 cm-3. An Fmax of 56 GHz was measured for this device.

AB - The d.c. and microwave characteristics of graded and abrupt junction In0.32Al0.68As/In0.33Ga0.67As heterojunction bipolar transistors (HBTs) grown on GaAs were investigated. A step-graded InxGa1-xAs buffer was employed to effectively suppress the threading dislocations resulting from the lattice mismatch between In0.33Ga0.67As and GaAs. These devices exhibited a small turn-on voltage of collector current and a high collector-emitter breakdown voltage (BVCEO>9.5 V) for a 0.35 μm-thick collector, demonstrating excellent quality of the base-emitter and base-collector junctions. Less size-dependence on current gain was observed for these metamorphic HBTs even without the emitter ledge. The peak common-emitter current gain at a collector current density of 40 kA/cm2 is 53 for the graded junction device with an emitter size of 2 × 4 μm2 and a base doping of 2 × 1019 cm-3. An Fmax of 56 GHz was measured for this device.

UR - http://www.scopus.com/inward/record.url?scp=0033100942&partnerID=8YFLogxK

U2 - 10.1016/S0038-1101(98)00310-4

DO - 10.1016/S0038-1101(98)00310-4

M3 - 期刊論文

AN - SCOPUS:0033100942

SN - 0038-1101

VL - 43

SP - 463

EP - 468

JO - Solid-State Electronics

JF - Solid-State Electronics

IS - 3

ER -

D.c. and microwave characteristics of In0.32Al0.68As/In0.33Ga0.67As heterojunction bipolar transistors grown on GaAs

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D.c. and microwave characteristics of In_0.32Al_0.68As/In_0.33Ga_0.67As heterojunction bipolar transistors grown on GaAs