DC and AC characteristics of HBTs with different base width

Che Ming Wang, Yue Ming Hsin

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

This paper discusses the dc and ac characteristics of InGaP/GaAs HBTs with different base width from 1.2 μm to 2.0 μm. There is no significant difference on dc current gain, common-emitter IV characteristics and f T performance due to the identical emitter layout. However, HBT with 1.2 μm base width demonstrated lowest fMAX. This is due to the limits on base current flowing in the 1.2 μm base width, where f MAX is dominated by RB instead of CBC.

Original languageEnglish
Title of host publication2005 International Conference on Indium Phosphide and Related Materials
Pages185-187
Number of pages3
DOIs
StatePublished - 2005
Event2005 International Conference on Indium Phosphide and Related Materials - Glasgow, Scotland, United Kingdom
Duration: 8 May 200512 May 2005

Publication series

NameConference Proceedings - International Conference on Indium Phosphide and Related Materials
Volume2005
ISSN (Print)1092-8669

Conference

Conference2005 International Conference on Indium Phosphide and Related Materials
Country/TerritoryUnited Kingdom
CityGlasgow, Scotland
Period8/05/0512/05/05

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