Damage of silicon induced in low-energy CF4 discharges

F. Y. Chen, Lin I

Research output: Contribution to journalArticlepeer-review

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The damage of silicon induced by low-energy (30 eV) CF4 discharges in a rf hollow oval magnetron system has been studied. The damage level was evaluated by the surface trap density measured by the high-low frequency capacitance-voltage method. By comparison with the results obtained using low-energy Ar discharges and other high-energy (450 eV) CF4 and Ar discharges, the involatile reaction residue was inferred as the major cause of damage in the low-energy CF4 discharges.

Original languageEnglish
Pages (from-to)1589-1590
Number of pages2
JournalJournal of Applied Physics
Issue number3
StatePublished - 1988


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